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Solution‐deposited Zinc oxide and Zinc oxide/Pentacene Bilayer Transistors: High Mobility n‐Channel, Ambipolar and Nonvolatile Devices

机译：溶液沉积的氧化锌和氧化锌/五烯双层晶体管：高迁移率n沟道，ambolar和非易失性器件

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Bhola Nath Pal; Phylicia Trottman; Jia Sun; Howard E. Katz;
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年度 2008
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1. Solution-Deposited Zinc Oxide and Zinc Oxide/Pentacene Bilayer Transistors: High Mobility n-Channel, Ambipolar, and Nonvolatile Devices [J] . Bhola Nath Pal, Phylicia Trottman, Jia Sun, Advanced Functional Materials . 2008,第12期

机译：溶液沉积氧化锌和氧化锌/并五苯双层晶体管：高迁移率n沟道，双极和非易失性器件
2. High performance solution-deposited bilayer channel indium-zinc-oxide thin film transistors by low-temperature microwave annealing [J] . Oh Se-Man, Jo Kwang-Won, Cho Won-Ju Current applied physics: the official journal of the Korean Physical Society . 2015,第Suppla2期

机译：低温微波退火制备高性能溶液沉积双层沟道铟锌氧化物薄膜晶体管
3. Stability of thin film transistors incorporating a zinc oxide or indium zinc oxide channel deposited by a high rate sputtering process [J] . A J Flewitt, J D Dutson, P Beecher, Semiconductor science and technology . 2009,第8期

机译：包含通过高速溅射工艺沉积的氧化锌或铟锌氧化物通道的薄膜晶体管的稳定性
4. Solution process ZnO and pentacene bilayer transistor: ambipolar, p-channel and n-channel operation [C] . Bhola Nath Pal, Howard E. Katz International Semiconductor Device Research Symposium . 2007

机译：溶液过程ZnO和五烯双层晶体管：Ambipolar，P沟道和N沟道操作
5. Fabrication and characterization of zinc oxide light-emitting diodes, indium zinc oxide thin-film transistors, and aluminum gallium nitride/gallium nitride high electron mobility transistor-based biosensors. [D] . Wang, Yu-Lin. 2009

机译：氧化锌发光二极管，氧化铟锌薄膜晶体管和氮化铝镓/氮化镓高电子迁移率晶体管基生物传感器的制造与表征。
6. Graphene Oxide as a Dielectric and Charge Trap Elementin Pentacene-Based Organic Thin-Film Transistors for Nonvolatile Memory [O] . KalyanJyoti Sarkar, Biswajit Pal, Pallab Banerji, 2019

机译：氧化石墨烯作为介电和电荷陷阱元素并五苯的有机薄膜晶体管在非易失性存储器中的应用
7. Electrical Properties of the Thin-Film Transistor With an Indium–Gallium–Zinc Oxide Channel and an Aluminium Oxide Gate Dielectric Stack Formed by Solution-Based Atmospheric Pressure Deposition [O] . Furuta Mamoru, Kawaharamura Toshiyuki, Wang Depang, 2012

机译：溶液沉积大气压形成的具有铟镓锌氧化物通道和氧化铝栅介质叠层的薄膜晶体管的电性能

Solution‐deposited Zinc oxide and Zinc oxide/Pentacene Bilayer Transistors: High Mobility n‐Channel, Ambipolar and Nonvolatile Devices

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