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Study of Epitaxy by RHEED(Reflection High Energy Electron Diffraction)-TRAXS(Total Reflection Angle X-Ray Spectroscopy).

机译：RAWEED（反射高能电子衍射）-Traxs（总反射角X射线光谱）外延的研究。

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Shozo INO;
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1. Atomick layer epitaxy processes of ZnSe on GaAs(0 0 1) as observed by beam-rocking reflection hgih-energy electron diffraction (RHEED) anjd total-reflection-angle X-ray spectrosocpy (TRAXS) [J] . Akihiro Ohtake, Takashi Hanada, Kenta Arai Journal of Crystal Growth . 1999,第MAY期

机译：束流反射高能电子衍射（RHEED）和全反射角X射线光谱（TRAXS）观察到的GaAs（0 0 1）上ZnSe的原子层外延过程
2. Reflection high-energy electron loss spectroscopy (RHEELS): a new approach in the investigation of epitaxial thin film growth by reflection high-energy electron diffraction (RHEED) [J] . Masek K., Moroz V., Matolin V. Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology . 2003,第1a2期

机译：反射高能电子损耗光谱（RHEELS）：通过反射高能电子衍射（RHEED）研究外延薄膜生长的新方法
3. Study of KTiOPO4 surface by x-ray photoelectron spectroscopy and reflection high-energy electron diffraction [J] . Atuchin VV., Kesler VG., Maklakova NY., Surface and Interface Analysis: SIA: An International Journal Devoted to the Development and Application of Techniques for the Analysis of Surfaces, Interfaces and Thin Films . 2002,第1期

机译：用X射线光电子能谱和反射高能电子衍射研究KTiOPO4表面
4. Diffraction condition dependence of reflection high-energy electron diffraction (RHEED) dampening during molecular-beam epitaxy (MBE)growth [C] . T.R. Block, Univ. of Texas/Austin, Redondo Beach, Epitaxial Growth Processes . 1994

机译：分子束外延（MBE）生长过程中反射高能电子衍射（RHEED）衰减的衍射条件依赖性
5. Characterization of MBE Grown Metal, Semiconductor and Superconductor Films and Interfaces by Concurrent Use of In Situ Reflection High Energy Electron Diffraction (RHEED) and Reflection Electron Energy Loss Spectroscopy (REELS) [D] . Strawbridge, Brett William 2012

机译：通过同时使用原位反射高能电子衍射（RHEED）和反射电子能量损失谱（REELS）来表征MBE生长的金属，半导体和超导体薄膜和界面
6. Study of the Microstructure of Amorphous Silica Nanostructures Using High-Resolution Electron Microscopy Electron Energy Loss Spectroscopy X-ray Powder Diffraction and Electron Pair Distribution Function [O] . Lahcen Khouchaf, Khalid Boulahya, Partha Pratim Das, 2020

机译：高分辨率电子显微镜电子能损光谱X射线粉衍射和电子对分布函数的非晶二氧化硅纳米结构的微观结构研究
7. A New Method for Atomic Depth Distribution Analysis Using RHEED-Total Reflection Angle X-ray Spectroscopy(TRAXS), and Growth Modes of Thin Films. [O] . Toshiro YAMANAKA, Shozo INO 1994

机译：一种新的原子深度分布分析方法，使用Rheed-总反射角X射线光谱（TraxS）和薄膜的生长模式。
8. Combined Rayleigh and Raman Scattering Study of Al(x)Ga(1-x)As Grown via Molecular Beam Epitaxy Under Reflection High-Energy Electron Diffraction Determined Growth Conditions. (Reannouncement with New Availability Information). [R] . Tang, W. C., Lao, P. D., Madhukar, A., 1988

机译：反射高能电子衍射测定生长条件下分子束外延生长al（x）Ga（1-x）as的Rayleigh和Raman散射组合研究。（重新公布新的可用性信息）。

Study of Epitaxy by RHEED(Reflection High Energy Electron Diffraction)-TRAXS(Total Reflection Angle X-Ray Spectroscopy).

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