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Carrier recombination and diffusion in high-purity diamond after electron irradiation and annealing

机译：电子照射和退火后高纯金刚石中的载体重组和扩散

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P. Grivickas; P. Ščajev; N. Kazuchits; S. Lastovskii; L. F. Voss; A. M. Conway; A. Mazanik; O. Korolik; V. Bikbajevas; V. Grivickas;
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1. Carrier recombination and diffusion in high-purity diamond after electron irradiation and annealing [J] . P. Crivickas, P.Scajev, N. Kazuchits, Applied Physics Letters . 2020,第24期

机译：电子照射和退火后高纯金刚石中的载体重组和扩散
2. Carrier recombination parameters in diamond after surface boron implantation and annealing [J] . P. Grivickas, P. Scajev, N. Kazuchits, Journal of Applied Physics . 2020,第24期

机译：在表面硼植入和退火后金刚石中的载体复合参数
3. Features of free carrier and exciton recombination, diffusion, and photoluminescence in undoped and phosphorus-doped diamond layers [J] . Scajev P., Jurkevicius J., Mickevicius J., Diamond and Related Materials . 2015,第Null期

机译：未掺杂和掺杂磷的金刚石层中自由载流子和激子复合，扩散和光致发光的特征
4. Effect of Annealing on Electronic Carrier Transport Properties of Gamma-Irradiated AlGaN/GaN High Electron Mobility Transistors [C] . A. Yadav, C. Schwarz, M. Shatkhin, Wide bandgap semiconductor materials and devices 15 . 2014

机译：退火对γ辐照的AlGaN / GaN高电子迁移率晶体管的电子载流子传输特性的影响
5. Ultrahigh Temperature Annealing and Laser Irradiation: A Potential Route to Producing Valuable Electronic Materials from Coal [D] . Seas, Michael A. 2018

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6. Microstructural Effect on the Enhancement of FieldElectron Emission Properties of Nanocrystalline Diamond Films by Li-IonImplantation and Annealing Processes [O] . Kamatchi Jothiramalingam Sankaran, *, Chien-Jui Yeh, 2018

机译：微观结构对场增强的影响锂离子纳米晶金刚石薄膜的电子发射特性植入和退火工艺
7. INVESTIGATION OF THE SWITCHING AND CARRIER RECOMBINATION CHARACTERISTICS IN THE PROTON IRRADIATED AND THERMALLY ANNEALED Si PIN DIODES [O] . A. Uleckas, E. Gaubas, J. Pavlovas, 2010

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8. THE CARRIER-RECOMBINATION BEHAVIOR AND ANNEALING PROPERTIES OF RADIATION-INDUCED RECOMBINATION CENTERS IN GERMANIUM [R] . O. L. Curtis, J. H. Crawford 1961

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Carrier recombination and diffusion in high-purity diamond after electron irradiation and annealing

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