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Remote linear radio frequency PECVD deposited high quality a-Si:H(P) layers and their application in SI heterojunction structures

机译：远程线性射频PECVD沉积高质量A-Si：H（P）层及其在Si异质结结构中的应用

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Y. Wu; C. Devilee; B. B. Van Aken; K. Boulif; W. J. Soppe; A. W. Weeber; L. J. Geerligs;
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年度 2009
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1. Performance of heterojunction solar cells with different intrinsic a-Si:H thin layers deposited by RF- and VHF- PECVD [J] . Jianqiang Wang, Xiaoning Ru, Tianyu Ruan, Journal of materials science . 2021,第20期

机译：异质结太阳能电池的性能与不同的内在A-Si：H薄层，rf-和vhf-pecvd沉积
2. Al2O3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition [J] . Journal of Applied Physics . 2014,第7期

机译：通过射频远程等离子体原子层沉积法沉积的Al2O3多密度层结构作为透湿屏障
3. Al_2O_3 multi-density layer structure as a moisture permeation barrier deposited by radio frequency remote plasma atomic layer deposition [J] . Hyunsoo Jung, Heeyoung Jeon, Hagyoung Choi, Journal of Applied Physics . 2014,第7期

机译：Al_2O_3多密度层结构作为通过射频远程等离子体原子层沉积法沉积的透湿屏障
4. Remote linear radio frequency PECVD deposited high quality a-Si:H(P) layers and their application in SI heterojunction structures [C] . Wu Y., Devilee C., Van Aken B.B., Photovoltaic Specialists Conference (PVSC), 2009 . 2009

机译：远程线性射频PECVD沉积高质量a-Si：H（P）层及其在SI异质结结构中的应用
5. A study of local atomic structure and thermal history in thermally grown and remote PECVD deposited silicon dioxide films. [D] . Fitch, Jon Taylor. 1990

机译：研究热生长和远端PECVD沉积的二氧化硅薄膜中的局部原子结构和热历史。
6. Excellent resistive switching properties of atomic layer-deposited Al2O3/HfO2/Al2O3 trilayer structures for non-volatile memory applications [O] . Lai-Guo Wang, Xu Qian, Yan-Qiang Cao, 2015

机译：原子层沉积的Al2O3 / HfO2 / Al2O3三层结构在非易失性存储应用中具有出色的电阻切换特性
7. Hydrogenated Amorphous Silicon Thin Films as Passivation Layers Deposited by Microwave Remote-PECVD for Heterojunction Solar Cells [O] . Min-Sung Jeon, Koichi Kamisako 2009

机译：氢化非晶硅薄膜作为钝化层，用于杂交偏光PECVD用于异质结太阳能电池
8. Characterization of new a-Si:H detectors fabricated from amorphous silicon deposited at high rate by helium enhanced PECVD [R] . Pochet, T. , Ilie, A. , Foulon, F. , 1993

机译：表征新的a-si：H探测器由非晶硅制成，通过氦增强pECVD以高速率沉积

Remote linear radio frequency PECVD deposited high quality a-Si:H(P) layers and their application in SI heterojunction structures

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