The effect of different arsenic species (As[subscript 2] or As[subscript 4]) on the quality of molecular beam epitaxy (MBE) grown GaNAsSb materials (samples A and B) and GaAs/ GaNAsSb/GaAs p+n-n+ devices (samples C and D) were investigated. The improvement in material quality in sample B, as well as the improvement in diode and solar cell characteristics in sample C, may suggest a successful defect density manipulation using As[subscript 2] overpressure for GaNAsSb growth.
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机译：不同砷（如[下标2]或[下标4]）对分子束外延（MBE）的质量的影响生长Ganassb材料（样品A和B）和GaAs / Ganassb / GaAs P + N-N +器件（样品C和D）进行了研究。样品B中的材料质量的改善，以及样品C中的二极管和太阳能电池特性的改善，可以使用作为Ganassb生长的[下标2]超压力成功缺陷密度操纵。
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