Change in Edge Surface Flatness of Silicon Wafer during Polishing

机译：抛光期间硅晶片边缘表面平坦度的变化

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Urara SATAKE; Toshiyuki ENOMOTO;
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1. Atomically Flat Silicon Surface and Silicon/Insulator Interface Formation Technologies for (100) Surface Orientation Large-Diameter Wafers Introducing High Performance and Low-Noise Metal–Insulator–Silicon FETs [J] . Kuroda R., Suwa T., Teramoto A., IEEE Transactions on Electron Devices . 2009,第2期

机译：用于（100）表面定向大直径晶圆的原子平坦硅表面和硅/绝缘体界面形成技术，引入了高性能和低噪声的金属-绝缘体-硅FET
2. New Evaluation Method of Polishing Pad Property for Estimating Edge Roll-Off of Silicon Wafer [J] . Yuma Obayashi, Urara Satake, Toshiyuki Enomoto Materials science forum . 2016,第期

机译：评估硅晶片边缘滚落的抛光垫性能的新评估方法
3. Fundamental investigation of silicon wafer edge treatment by ultrasonically assisted polishing (UAP) [J] . Yongbo Wu, Weiping Yang International journal of materials & product technology . 2011,第3a4期

机译：超声辅助抛光（UAP）进行硅片边缘处理的基础研究
4. ACHIEVEMENT OF HIGH FLATNESS OF LARGE DIAMETER SILICON WAFER IN DOUBLE-SIDED POLISHING OPTIMIZATION OF POLISHING CONDITIONS CONSIDERING RELATIVE MOTION DIRECTION [C] . Kenji HIROSE, Toshiyuki ENOMOTO ASME international manufacturing science and engineering conference;MSEC2009 . 2009

机译：考虑相对运动方向的双条件抛光优化中大直径硅晶片的高平整度
5. Chemical Mechanical Polishing of Semiconductor Wafers: Surface Element Modeling and Simulation to Predict Wafer Surface Shape [D] . Wilson, Kenneth DeWayne, Jr. 2019

机译：半导体晶片的化学机械抛光：预测晶片表面形状的表面元素建模和仿真
6. Growth and Self-Assembly of Silicon–Silicon Carbide Nanoparticles into Hybrid Worm-Like Nanostructures at the Silicon Wafer Surface [O] . Manuel Alejandro Perez-Guzman, Rebeca Ortega-Amaya, Yasuhiro Matsumoto, 2018

机译：碳化硅-碳化硅纳米粒子在硅晶片表面的生长和自组装成蠕虫状纳米杂化结构。
7. Achievement of Precise Edge Shapes of Silicon Wafers with Double-Layered Polishing Pads : Improvement of Edge Flatness Based on Static/Dynamic Model(Machine Elements, Design and Manufacturing) [O] . Takahiro MIYAKE, Toshiyuki ENOMOTO, Norikazu TABATA 2010

机译：具有双层抛光垫的硅晶片精确边缘形状的成果：基于静态/动态模型的边缘平坦度改善（机器元件，设计和制造）
8. Semiconductor Measurement Technology: Automatic Determination of the Interstitial Oxygen Content of Silicon Wafers Polished on Both Sides [R] . Gladden, W. K. , Slaughter, S. R. , Duncan, W. M. , 1988

机译：半导体测量技术：自动测定双面抛光硅晶片的间隙氧含量

Change in Edge Surface Flatness of Silicon Wafer during Polishing

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