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Ultra-Thin Silicon based Piezoelectric Capacitive Tactile Sensor

机译:超薄硅基压电电容触觉传感器

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摘要

This paper presents an ultra-thin bendable silicon based tactile sensor, in a piezoelectric capacitor configuration, realized by wet anisotropic etching as post-processing steps. The device is fabricated over bulk silicon, which is thinned down to 35 μm from an original thickness of 636 μm. Dicing of thin membrane is achieved by low cost novel technique of Dicing before Etching. The piezoelectric capacitor is composed of polyvinylidene fluoride trifluoroethylene (PVDF-TrFE), which present an attractive avenue for tactile sensing as they respond to dynamic contact events (which is critical for robotic tasks), easy to fabricate at low cost and are inherently flexible. The sensor exhibits enhanced piezoelectric properties, thanks to the optimization of the poling procedure. The sensor capacitive behaviour is confirmed using impedance analysis and the electro-mechanical characterization is done using TIRA shaker setup.
机译:本文提出了一种压电电容器配置的超薄可弯曲硅基触觉传感器,通过湿法各向异性蚀刻作为后处理步骤实现。该器件是在块状硅上制造的,块状硅已从636μm的原始厚度薄至35μm。薄膜的划片是通过低成本的蚀刻前划片新技术实现的。压电电容器由聚偏二氟乙烯三氟乙烯(PVDF-TrFE)组成,由于它们对动态接触事件做出响应(这对于机械手的任务至关重要),因此易于制造且成本低廉,并且具有固有的柔性,从而为触觉传感提供了诱人的途径。由于优化了极化程序,该传感器具有增强的压电性能。使用阻抗分析确认传感器的电容行为,并使用TIRA振荡器设置完成机电特性。

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