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Electronic and transport properties of porous graphenes: two-dimensional benzo- and aza-fused π-conjugated-microporous-polymer sheets and boron–nitrogen co-doped derivatives

机译:多孔石墨烯的电子和运输性能:二维苯并和AZA熔融π-共轭微孔 - 聚合物片和硼 - 氮共掺杂衍生物

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摘要

Inspired by recent successful synthesis of porous frameworks based on aza-fused conjugatedmicroporous- polymers (Angew. Chem. Int. Ed., 2011, 50, 8753–8757), we investigate electronic and electron transport properties of two-dimensional (2D) benzo-conjugated-microporous-polymer (benzo- CMP) and aza-CMP sheets and their boron-nitrogen (BN) co-doped derivatives using density-functional theory calculations and the non-equilibrium Greenu27s function (NEGF) method. Both benzo-CMP and aza-CMP possess pore diameters about 12 °A and both are semiconductors with a direct bandgap of 0.92 and 1.07 eV, respectively. The BN co-doped derivatives possess smaller bandgaps (0.47 to 0.6 eV). Computed current–voltage (I–Vb) curves are consistent with the semiconducting properties for all 2D systems. The tunable electronic and electron transport properties via BN co-doping offered by benzo- CMP and aza-CMP may be exploited for applications in low-dimensional electronics.
机译:近期基于AZA融合的共轭型霉孔聚合物的多孔框架成功合成的启发(Angew.Chem.Sted。,2011,50,8753-8757),我们调查了二维(2D)苯并的电子和电子传输性能 - 使用密度功能理论计算和非平衡绿色 U27S功能(NegF)方法,缀合微孔 - 聚合物(苯并-CMP)和硼 - 氮(BN)共掺杂衍生物。 Benzo-CMP和AZA-CMP都具有约12°A的孔径,两者都是半导体,分别具有0.92和1.07eV的直接带隙。 BN共掺杂衍生物具有较小的带隙(0.47至0.6eV)。计算的电流 - 电压(I-VB)曲线与所有2D系统的半导体属性一致。通过BN-CMP和AZA-CMP提供的通过BN共掺杂可调谐电子和电子传输性能可以在低维电子设备中进行利用。

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