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Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device

机译：AL2O3 / GaN MOS装置深耗尽区电导法调查散滴

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Yuanyuan Shi; Qi Zhou; Anbang Zhang; Liyang Zhu; Yu Shi; Wanjun Chen; Zhaoji Li; Bo Zhang;
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1. Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device [J] . Yuanyuan Shi, Qi Zhou, Anbang Zhang, Nanoscale Research Letters . 2017,第1期

机译：Al 2 O 3 / GaN MOS器件深耗尽区电导方法研究体阱
2. Trapping effects in Al2O3/AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistor investigated by temperature dependent conductance measurements [J] . P. Kordoš R. Stoklas D. Gregušová Š. Gaži and J. Novák Applied Physics Letteres . 2010,第1期

机译：通过与温度相关的电导率测量研究Al2O3 / AlGaN / GaN金属氧化物半导体异质结构场效应晶体管中的陷阱效应
3. Fast and slow traps in Al2O3/(GaN)/AlGaN/GaN heterostructures studied by conductance technique [J] . Osvald J. Physica, E. Low-dimensional systems & nanostructures . 2018,第期

机译：通过电导技术研究的Al2O3 /（GaN）/ AlGaN / GaN异质结构快速和缓慢的陷阱
4. Modified Conductance Method for The Extraction of Interface Traps in GaN Metal-Insulator-Semiconductor High Electron Mobility Transistors [C] . Yu-Chieh Chien, Fong-Min Ciou, Yu-Shan Lin, IEEE International Symposium on the Physical and Failure Analysis of Integrated Circuits . 2020

机译：改进的电导法提取GaN金属-绝缘体-半导体高电子迁移率晶体管中的界面陷阱
5. Interface Engineering and Bulk Trap Investigations in GaN-on-Si Lateral Heterojunction Power Devices [D] . Yang, Shu. 2014

机译：Gan-on-Si横向异性结电源装置的界面工程和散装陷阱调查
6. Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device [O] . Yuanyuan Shi, Qi Zhou, Anbang Zhang, 2017

机译：Al2O3 / GaN MOS器件深耗尽区中通过电导方法研究体陷阱
7. Investigation on de-trapping mechanisms related to non-monotonic kink pattern in GaN HEMT devices [O] . Chandan Sharma, Robert Laishram, Amit, 2017

机译：关于GaN HEmT器件中与非单调扭结模式相关的去陷机制的研究
8. Study of Bulk Trapping Effects in Radiation-Resistence MOS Devices. [R] . oldham,william g. 1974

机译：辐射抗性mOs器件中的体捕获效应研究。

Investigation of Bulk Traps by Conductance Method in the Deep Depletion Region of the Al2O3/GaN MOS Device

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