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Selective Transfer of Si Thin-Film Microchips by SiO2 Terraces on Host Chips for Fluidic Self-Assembly

机译:通过Si2梯度在主机芯片上选择性转移Si薄膜微芯片用于流体自组装

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摘要

Fluidic self-assembly is a versatile on-chip integration method. In this scheme, a large number of semiconductor microchips are spontaneously deposited onto a host chip. The host chip typically comprises a Si substrate with an array of pockets at the designated microchip placement sites. In this study, we installed an SiO2 layer on the terrace region between the pockets of the host chip, to reduce the attraction with the Si microchips. By the SiO2-topped terrace scheme, we demonstrated a significant enhancement in the deposition selectivity of the Si microchips to the pocket sites, relative to the case of the conventional Si-only host chip. We theoretically explained the deposition selectivity enhancement in terms of the van der Waals interaction. Furthermore, our quantitative analysis implicated a potential applicability of the commonly used interlayer dielectrics, such as HfO2, silsesquioxanes, and allyl ethers, directly as the terrace component.
机译:流体自组装是一种多功能的片上集成方法。在该方案中,大量的半导体微芯片自发地沉积在主芯片上。主机芯片通常包括Si衬底,所述Si衬底在指定的微芯片放置位点处具有袋阵列。在这项研究中,我们在主机芯片的口袋之间安装了一个SiO2层,以减少与SI微芯片的吸引力。通过SiO2接收的露台方案,我们在常规Si宿主芯片的情况下表现出Si微芯片的沉积选择性的显着增强。理论上解释了van der Waals相互作用方面的沉积选择性增强。此外,我们的定量分析涉及常用的层间电介质的潜在适用性,例如HFO2,Silsesquioxanes和烯丙基醚,直接作为露台组分。

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