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P-gate GaN HEMT gate-driver design for joint optimization of switching performance, freewheeling conduction and short-circuit robustness

机译：P型GaN HEMT门 - 驱动器设计，用于联合优化开关性能，续流传导和短路鲁棒性

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Han Wu; Asad Fayyaz; Alberto Castellazzi;
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年度 2018
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1. Switching Transient Analysis and Characterization of an E-Mode B-Doped GaN-Capped AlGaN DH-HEMT with a Freewheeling Schottky Barrier Diode (SBD) [J] . Subramanian Baskaran, Anandan Mohanbabu, Veerappan Saminathan, Journal of Electronic Materials . 2020,第7期

机译：用续流肖特基势垒二极管（SBD）开关瞬态分析和表征E模式B掺杂GaN-Cappe Algan Dh-Hemt
2. Characterization and optimization of MIS-HEMTs device of high~k dielectric material on quaternary barrier of Alo.42lno.o3Gao.55N/UID-AIN/GaN/GaN heterostructure for high power switching application [J] . Tarauni Yusuf U., Thiruvadigal D. John, Joseph H. Bijo Applied Surface Science . 2019,第SEPa15期

机译：大功率开关应用Alo.42lno.o3Gao.55N / UID-AIN / GaN / GaN异质结构四级势垒上高k介电材料MIS-HEMTs器件的表征和优化
3. Characterization and optimization of MIS-HEMTs device of high~k dielectric material on quaternary barrier of Alo.42lno.o3Gao.55N/UID-AIN/GaN/GaN heterostructure for high power switching application [J] . Tarauni Yusuf U., Thiruvadigal D. John, Joseph H. Bijo Applied Surface Science . 2019,第Sepa15期

机译：高〜k介电材料MIS-HEMTS装置的特征与优化ALO.42LNO.O3GaO.55N / UID-AIN / GAN / GAN异质结构进行高功率开关应用
4. P-gate GaN HEMT gate-driver design for joint optimization of switching performance, freewheeling conduction and short-circuit robustness [C] . Han Wu, Asad Fayyaz, Alberto Castellazzi International Symposium on Power Semiconductor Devices and IC's . 2018

机译：P栅极GaN HEMT栅极驱动器设计可共同优化开关性能，续流传导和短路鲁棒性
5. Gan hemts and moshemts for power switching applications [D] . Hu, Zongyang 2015

机译：Gan hemts和moshemts用于电源开关应用
6. Transient Simulation for the Thermal Design Optimization of Pulse Operated AlGaN/GaN HEMTs [O] . Huaixin Guo, Tangsheng Chen, Shang Shi 2020

机译：用于脉冲操作的AlGaN / GaN HEMT热设计优化的瞬态仿真
7. Experimental study of the short-circuit performanceudfor a 600V normally-off p-gate GaN HEMT [O] . Oeder Thorsten, Castellazzi Alberto, Pfost Martin 2017

机译：短路性能的实验研究 ud用于600V常关型p栅GaN HEMT

P-gate GaN HEMT gate-driver design for joint optimization of switching performance, freewheeling conduction and short-circuit robustness

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