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Electronic and chemical properties of cathode structures using 4,7-diphenyl-1,10-phenanthroline doped with rubidium carbonate as electron injection layers

机译：使用4,7-二苯基-1,10-菲咯啉的阴极结构的电子和化学性质，掺杂碳酸铷作为电子注入层

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Mei-Hsin Chen; Yu-Hung Chen; Chang-Tin Lin; Guan-Ru Lee; Chih-I Wu; Dong-Seok Leem; Jang-Joo Kim; Tun-Wen Pi;
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1. Electronic and chemical properties of cathode structures using 4,7-diphenyl-1,10-phenanthroline doped with rubidium carbonate as electron injection layers [J] . Mei-Hsin Chen, Yu-Hung Chen, Chang-Tin Lin, Journal of Applied Physics . 2009,第11期

机译：碳酸rub掺杂的4,7-二苯基-1,10-菲咯啉作为电子注入层的阴极结构的电子和化学性质
2. Rubidium-Carbonate-Doped 4,7-Diphenyl-1,10-phenanthroline Electron Transporting Layer for High-Efficiency p-i-n Organic Light Emitting Diodes [J] . Leem DS, Kim SY, Kim JJ, Electrochemical and solid-state letters . 2009,第1期

机译：p碳酸酯掺杂的4,7-二苯基-1,10-菲咯啉电子传输层，用于高效p-i-n有机发光二极管
3. 2-Methyl-9,10-bis(naphthalen-2-yl)anthracene doped rubidium carbonate as an effective electron injecting interlayer on indium-tin oxide cathode in inverted bottom-emission organic light-emitting diodes [J] . Tsai Chi-Ting, Kao Po-Ching, Chu Sheng-Yuan Journal of Applied Physics . 2018,第6期

机译：2-甲基-9,10-双（萘-2-基）蒽掺杂的碳酸rub作为反向底部发射有机发光二极管中铟-锡氧化物阴极上的有效电子注入中间层
4. Investigations of electron-injection mechanisms and interfacial chemical reactions of Bphen doped with rubidium carbonate in OLEDs [C] . Mei-Hsin Chen, Dong-Seok Leem, C. T. Lin, Conference on organic light-emitting materials and devices . 2008

机译：OLED中掺杂碳酸carbonate的Bphen的电子注入机理及界面化学反应的研究
5. Structure and Electronic Property Relationships in Chemically Doped Semiconducting Polymers and Polymer Photovoltaics [D] . Aubry-Komin, Taylor . 2019

机译：化学掺杂半导体聚合物和聚合物光伏的结构和电子性质关系
6. Molten‐Salt‐Assisted Chemical Vapor Deposition Process for Substitutional Doping of Monolayer MoS2 and Effectively Altering the Electronic Structure and Phononic Properties [O] . Wei Li, Jianqi Huang, Bo Han, 2020

机译：熔盐辅助化学气相沉积工艺用于单层MOS2的替代掺杂有效改变电子结构和声子特性
7. Synthesis, Electrochemical Properties and Changes of Crystal and Electronic Structures in Charge/Discharge Process of Spinel Type Cathode-Materials Mg(Mg_0.5V_1.5−_xNi_x)O₄ (x = 0, 0.1, 0.2, 0.3) for Magnesium Secondary Batteries [O] . Yasushi IDEMOTO, Natsumi KAWAKAMI, Naoya ISHIDA, 2019

机译：尖晶石型阴极 - 材料电荷/放电过程中的合成，电化学性能和晶体结构的变化Mg（Mg _{0.5 1.5 - _{x ni _{x ）O _{4 （ x = 0，0.1,0.2， 0.3）镁二次电池}}}}
8. Proximity Effects of Beryllium-Doped GaN Buffer Layers on the Electronic Properties of Epitaxial AlGaN/GaN Heterostructures [R] . Storm, D. F., Katzer, D. S., Deen, D. A., 2010

机译：铍掺杂GaN缓冲层对外延alGaN / GaN异质结构电子性质的邻近效应

Electronic and chemical properties of cathode structures using 4,7-diphenyl-1,10-phenanthroline doped with rubidium carbonate as electron injection layers

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