Strongly coupled multiple-dot characteristics in dual recess structured silicon channel

摘要

Silicon single electron transistors were fabricated by using the highly doped silicon channel with dual recess structure along with two recess gates and one central island gate as a pattern. The transition of Coulomb oscillation characteristics from a single dot to a strongly coupled multiple dot was demonstrated for the different oxidation times and recess dimensions. The multiple-dot characteristic in the longer post lithography oxidized sample is attributed to the formation of a single dot in each recess due to the stress induced pattern-dependent oxidation, which leads to multiple dot in the channel. The temperature variation measurement, which was performed after two thermal cycling of the same sample to 20 and 4.2?K with 1?month gap, revealed the highly stable nature of the multiple-dot device transport characteristics. The multiple-dot device can also be operated as a unique nonlinear tunable resistance single electron transistor