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Room-temperature fabrication of nanocrystalline CePO₄:Tb3+ films by SILAR method and their luminescence-switching properties

机译：通过Sill方法及其发光切换性能，纳米晶CEPO _{4 ：Tb 3 + 薄膜的室温制备}

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Maemi MASUDA; Manabu HAGIWARA; Shinobu FUJIHARA;
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1. Room-temperature fabrication of nanocrystalline CePO4:Tb3+ films by SILAR method and their luminescence-switching properties [J] . Maemi MASUDA, Manabu HAGIWARA, Shinobu FUJIHARA Journal of the Ceramic Society of Japan . 2016,第1期

机译：SILAR法常温制备纳米CePO4：Tb3 +薄膜及其发光转换特性
2. Sol-gel fabrication, patterning and photoluminescent properties of LaPO4 : Ce3+, Tb3+ nanocrystalline thin films [J] . Yu M., Lin J., Fu J., Chemical Physics Letters . 2003,第1a2期

机译：LaPO4：Ce3 +，Tb3 +纳米晶薄膜的溶胶-凝胶制备，图案化和光致发光性能
3. Physical properties of nanocrystalline CuO thin films prepared by the SILAR method [J] . Mageshwari K., Sathyamoorthy R. Materials science in semiconductor processing . 2013,第2期

机译：SILAR方法制备的纳米晶CuO薄膜的物理性质
4. Room-temperature wide-range luminescence and structural, optical, and electrical properties of SILAR deposited Cu-Zn-S nanostructured thin films [C] . Edwin Jose, M. C. Santhosh Kumar Nanostructured thin films IX . 2016

机译：SILAR沉积的Cu-Zn-S纳米结构薄膜的室温宽范围发光以及结构，光学和电学性质
5. Controlling Ion Deposition to Improve the Room-Temperature Magnetoelectricity and Microwave Properties of M-type Hexaferrite Thin Films [D] . Izadkhah, Hessam 2019

机译：控制离子沉积以改善M型六方铁氧体薄膜的室温磁电和微波性能
6. Influence of wide band gap oxide substrates on the photoelectrochemical properties and structural disorder of CdS nanoparticles grown by the successive ionic layer adsorption and reaction (SILAR) method [O] . Mikalai V Malashchonak, Alexander V Mazanik, Olga V Korolik, 2015

机译：宽带隙氧化物衬底对通过连续离子层吸附和反应（SILAR）法生长的CdS纳米粒子的光电化学性质和结构无序的影响
7. Characterization of nanocrystalline cadmium telluride thin films grown by successive ionic layer adsorption and reaction (SILAR) method [O] . A U Ubale, R J Dhokne, P S Chik Hlikar, 2005

机译：通过连续离子层吸附和反应（sILaR）法生长纳米晶碲化镉薄膜的表征

Room-temperature fabrication of nanocrystalline CePO4:Tb3+ films by SILAR method and their luminescence-switching properties

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Room-temperature fabrication of nanocrystalline CePO₄:Tb3+ films by SILAR method and their luminescence-switching properties