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Setting up of a floating gate test bench in a low noise environment to measure very low tunneling currents

机译：在低噪声环境中设置浮栅测试台，测量非常低的隧道电流

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Jeremy Postel-Pellerin; Gilles Micolau; Philippe Chiquet; Jeanne Melkonian; Guillaume Just; Daniel Boyer; Cyril Ginoux;
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1. Spatial and energetical profiles of defects extracted from ultra-low level trap-assisted leakage current in non-volatile floating thin tunnel oxide memory devices by using direct and floating gate technique measurements [J] . Burignat S, Plossu C, Boivin P Journal of Non-Crystalline Solids: A Journal Devoted to Oxide, Halide, Chalcogenide and Metallic Glasses, Amorphous Semiconductors, Non-Crystalline Films, Glass-Ceramics and Glassy Composites . 2007,第16a17期

机译：通过直接和浮栅技术测量从非易失性浮动薄隧道氧化物存储器件中的超低水平陷阱辅助泄漏电流提取的缺陷的空间和能量分布
2. Measurement of Ultralow Gate Tunneling Currents Using Floating-Gate Integrator Technique [J] . Bin Wang, Yanjun Ma, Ron Paulsen, IEEE Electron Device Letters . 2005,第5期

机译：使用浮栅积分器技术测量超低栅极隧穿电流
3. Measurement of very low tunneling current density in SiO/sub 2/ using the floating-gate technique [J] . Fishbein B., Krakauer D. IEEE Electron Device Letters . 1991,第12期

机译：使用浮栅技术测量SiO / sub 2 /中极低的隧道电流密度
4. Very low tunneling current measurements using the Floating-Gate technique in a very low-noise environment [C] . J. Postel-Pellerin, G. Micolau, P. Chiquet, IMEKO TC4 Symposium Measurements of Electrical Quantities . 2014

机译：非常低的隧道电流测量，使用浮栅技术在一个非常低噪声环境中
5. Strain effects on silicon CMOS transistors: Threshold voltage, gate tunneling current, and 1/f noise characteristics. [D] . Lim, Ji-Song. 2007

机译：应变对硅CMOS晶体管的影响：阈值电压，栅极隧穿电流和1 / f噪声特性。
6. Noise-Gated Encoding of Slow Inputs by Auditory Brain Stem Neurons With a Low-Threshold K+ Current [O] . Yan Gai, Brent Doiron, Vibhakar Kotak, -1

机译：低阈值K +电流的听觉脑干神经元对慢速输入的噪声门控编码
7. Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by pulsed I-V and low frequency noise measurements [O] . Karboyan Serge, Tartarin Jean-Guy, Rzin M, 2013

机译：栅极漏电流对alGaN / GaN HEmT的影响由低频噪声和脉冲电测量证明，栅极漏电流对alGaN / GaN HEmT的影响由脉冲I-V和低频噪声测量证明

Setting up of a floating gate test bench in a low noise environment to measure very low tunneling currents

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