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Effect of post annealed treatment on HfN thin films prepared by DC reactive magnetron sputtering

机译：DC反应磁控溅射制备的HFN薄膜后退火处理的影响

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W. Phae-ngam; J. Prathumsit; G. Gitgeatpong; C. Chananonnawathorn; T. Lertvanithphol; B. Saekow; H. Nakajima; M. Horprathum;
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2. A Spectroscopic Ellipsometry Study of TiO2 Thin Films Prepared by dc Reactive Magnetron Sputtering: Annealing Temperature Effect [J] . Mati Horprathum, Pongpan Chindaudom, Pichet Limsuwan 中国物理快报：英文版 . 2007,第006期

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3. Annealing effect on ITO thin films prepared by microwave-enhanced dc reactive magnetron sputtering for telecommunication applications [J] . Meng LH., Placido F. Surface & Coatings Technology . 2003,第1期

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4. Effect of Oxygen Flow Rate and Post Annealing on Vanadium Oxide Thin Films Prepared by DC Pulse Magnetron Sputtering [C] . Wantanee Hincheeranun, Montri Aiempanakit, Kamon Aiempanakit International Conference on Applied Physics and Material Applications . 2016

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5. The deposition and characterization of high dielectric constant films prepared by pulsed reactive DC magnetron sputtering technique. [D] . Kim, Jin-Young. 2000

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7. Structural, luminescence and Judd-Ofelt analysis to study the influence of post-annealing treatment on the AIN:Tb thin films prepared by radiofrequency magnetron sputtering [O] . Tucto Salinas Karem Yoli 2016

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Effect of post annealed treatment on HfN thin films prepared by DC reactive magnetron sputtering

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