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Influence of substrate misorientation on the structural quality of lattice matched GaAs/ScYbAs/GaAs structures

机译：基材对晶格匹配GaAs / SCYBAS / GaAs结构的结构质量的影响

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Béatrice Guenais; Alain Poudoulec; André Guivarch; Yves Ballini; Vincent Durel; Cécile dAnterroches;
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年度 1992
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1. Influence of substrate misorientation on the optical and structural properties of InGaAs/GaAs single strained quantum wells grown on (111) B GaAs by molecular beam epitaxy [J] . D.Gonzalez Microelectronics Journal . 1999,第4a5期

机译：衬底取向错误对（111）B GaAs分子束外延生长InGaAs / GaAs单应变量子阱的光学和结构性质的影响
2. Effect of (1 0 0) GaAs substrate misorientation on electrophysical parameters, structural properties and surface morphology of metamorphic HEMT nanoheterostructures InGaAs/InAlAs [J] . G.B. Galiev, I.S. Vasilevskii, E.A. Klimov, Journal of Crystal Growth . 2014,第apra15期

机译：（1 0 0）GaAs衬底取向错误对变质HEMT纳米异质结构InGaAs / InAlAs的电物理参数，结构性质和表面形态的影响
3. Structural investigation of InGaAsN films grown on pseudo-lattice-matched InGaAs substrates by metalorganic vapor phase epitaxy [J] . Pornsiri Kongjaeng, Sakuntam Sanorpim, Takahisa Yamamoto, Journal of Crystal Growth . 2007,第Jan期

机译：金属有机气相外延法在准晶格匹配的InGaAs衬底上生长的InGaAsN膜的结构研究
4. Influence of MOVPE growth conditions and substrate parameters on the structural quality of multi-period InGaAsP/InP MQW structures [C] . Reier, F.W., Bornholdt, Indium Phosphide and Related Materials, 1996. IPRM '96., Eighth International Conference on . 1996

机译：MOVPE生长条件和衬底参数对多周期InGaAsP / InP MQW结构结构质量的影响
5. Optoelectronic devices based on low threshold strained InGaAs/GaAs quantum well lasers grown on structured substrates [D] . Frateschi, Newton Cesario 1993

机译：基于在结构化衬底上生长的低阈值应变InGaAs / GaAs量子阱激光器的光电器件
6. The electronic and optical properties of quaternary GaAs1-x-yNxBiy alloy lattice-matched to GaAs: a first-principles study [O] . Xiaoyang Ma, Dechun Li, Shengzhi Zhao, 2014

机译：四元GaAs1-x-y的电子和光学性质ñX双ÿ 与GaAs晶格匹配的合金：第一性原理研究
7. Effect of a lattice-matched GaAsSb capping layer on the structural properties of InAs/InGaAs/InP quantum dots [O] . Ulloa, JM José Maria), Koenraad, PM Paul, Bonnet-Eymard, M, 2010

机译：晶格匹配的GaAsSb覆盖层对InAs / InGaAs / InP量子点结构性能的影响
8. Influence of GaAs(001) Substrate Misorientation towards (111) on the OpticalProperties of In(x)Ga(1-x)As/GaAs [R] . Rich, D. H., Rammohan, K., Tang, Y., 1995

机译：Gaas（001）衬底取向偏向（111）对In（x）Ga（1-x）as / Gaas光学性质的影响

Influence of substrate misorientation on the structural quality of lattice matched GaAs/ScYbAs/GaAs structures

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