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Experimental TDPAC and Theoretical DFT Study of Structural, Electronic, and Hyperfine Properties in (111In → )111Cd-Doped SnO2 Semiconductor: Ab Initio Modeling of the Electron-Capture-Decay After-Effects Phenomenon

机译：实验性TDPAC和结构，电子和高浓性特性的理论DFT研究（111IN→）111CD掺杂的SnO2半导体：AB初始型腐烂后效应现象的初始建模

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Germán N. Darriba; Emiliano L. Muñoz; Artur W. Carbonari; Mario Rentería;
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机译：实验性TDPAC和结构，电子和高浓性特性的理论DFT研究（IN-111 - ＆GT;掺杂SnO2半导体：AB Initio建模的电子捕获腐烂后效应现象
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Experimental TDPAC and Theoretical DFT Study of Structural, Electronic, and Hyperfine Properties in (111In → )111Cd-Doped SnO2 Semiconductor: Ab Initio Modeling of the Electron-Capture-Decay After-Effects Phenomenon

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