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PL Intensity and Life-Time Enhancements of the n-GaN Light-Emitting Diode During the Device Fabrication

机译：在装置制造期间N-GaN发光二极管的PL强度和寿命增强

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Shen-Li Chen; Chin-Chai Chen; Yeong-Lin Lai; Wen-Jung Chiang; Hung-Wei Chen;
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1. Fabrication of large-scale spherical-cap structure and the application on n-GaN based light-emitting diodes [J] . Yin Hong-Xing, Zhu Chuan-Rui, Shen Yan, Journal of Vacuum Science & Technology . 2014,第3期

机译：大规模球形盖结构的制备及其在n-GaN基发光二极管上的应用
2. Light-Emitting Diodes: Simultaneously Enhancing Light Extraction and Device Stability of Organic Light-Emitting Diodes using a Corrugated Polymer Nanosphere Templated PEDOT:PSS Layer (Adv. Energy Mater. 8/2014) [J] . Changyeon Lee, Dong Jin Kang, Hyunbum Kang, Advanced energy materials . 2014,第8期

机译：发光二极管：使用波纹状聚合物纳米球模板化的PEDOT：PSS层，同时提高有机发光二极管的光提取和器件稳定性（Adv。Energy Mater。8/2014）
3. Fabrication of p-type ZnO nanorods/ n-GaN film heterojunction ultraviolet light-emitting diodes by aqueous solution method [J] . Nguyen Xuan Sang, Tay Chuan Beng, Tang Jie, Physica status solidi . 2013,第8期

机译：水溶液法制备p型ZnO纳米棒/ n-GaN薄膜异质结紫外发光二极管
4. Design and fabrication of resonant cavity enhanced light-emitting diodes using a tunnel diode contact [C] . Zhu, R., Hargis, . 2000

机译：使用隧道二极管触点的谐振腔增强型发光二极管的设计和制造
5. Enhanced performance of organic light-emitting diodes (OLEDs) and OLED-based photoluminescent sensing platforms by novel microstructures and device architectures [D] . Liu, Rui 2012

机译：新型的微结构和器件架构增强了有机发光二极管（OLED）和基于OLED的光致发光传感平台的性能
6. The fabrication of white light-emitting diodes using the n-ZnO/NiO/p-GaN heterojunction with enhanced luminescence [O] . Mazhar Ali Abbasi, Zafar Hussain Ibupoto, Mushtaque Hussain, 2013

机译：使用具有增强发光的n-ZnO / NiO / p-GaN异质结制造白色发光二极管
7. Light-Emitting Diodes: Simultaneously Enhancing Light Extraction and Device Stability of Organic Light-Emitting Diodes using a Corrugated Polymer Nanosphere Templated PEDOT:PSS Layer (Adv. Energy Mater. 8/2014) [O] . Changyeon Lee, Dong Jin Kang, Hyunbum Kang, 2014

机译：发光二极管：同时使用瓦楞聚合物纳米层模板PEDOT同时提高有机发光二极管的光提取和器件稳定性：PSS层（ADV。能源母体。8/2014）

PL Intensity and Life-Time Enhancements of the n-GaN Light-Emitting Diode During the Device Fabrication

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