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Single Crystalline Iron Silicide and Beta-Iron Disilicide Nanowires Formed through Chemical Vapor Deposition

机译：通过化学气相沉积形成单晶铁硅化物和β-铁二硅酰胺纳米线

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Wei-Jie Huang; Yu-Yang Chen; Hsiu-Ming Hsu; Kuo-Chang Lu;
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1. Single Crystalline Higher Manganese Silicide Nanowire Arrays with Outstanding Physical Properties through Double Tube Chemical Vapor Deposition [J] . Chin-Li Shen, Shu-Meng Yang, Kuo-Chang Lu Nanomaterials . 2020,第9期

机译：单晶高级锰硅化物纳米线阵列，通过双管化学气相沉积具有出色的物理性质
2. Electrical characteristics of single and doubly connected Ni silicide nanowire grown by plasma-enhanced chemical vapor deposition [J] . Joondong Kim, Dong Hun Shin, Eung-Sug Lee, Applied Physics Letters . 2007,第25期

机译：等离子体增强化学气相沉积法生长的单双连接硅化镍纳米线的电学特性
3. Chemical Vapor Deposition of TiSi Nanowires on C54 TiSi2 Thin Film:An Amorphous Titanium Silicide Interlayer Assisted Nanowire Growth [J] . Huang-Kai Lin, Hsin-An Cheng, Chi-Young Lee Chemistry of Materials: A Publication of the American Chemistry Society . 2009,第22期

机译：C54 TiSi2薄膜上TiSi纳米线的化学气相沉积：非晶硅化钛中间层辅助纳米线生长
4. Formation of a single In(Ga)As/GaAs quantum dot embedded in a site-controlled GaAs nanowire by metalorganic chemical vapor deposition for application to single photon sources [C] . J. Tatebayashi, Y. Ota, D. Karunathillake, Nanowires and nanotubes - synthesis, properties, devices and energy applications of one-dimensional materials . 2012

机译：通过金属有机化学气相沉积法形成嵌入在位置控制的GaAs纳米线中的单个In（Ga）As / GaAs量子点，以应用于单光子源
5. Synthesis and characterization of silicide nanowire materials using chemical vapor deposition of single source precursor molecules. [D] . Schmitt, Andrew Lee. 2009

机译：硅化物纳米线材料的合成和表征使用单源前体分子的化学气相沉积。
6. Single Crystalline Iron Silicide and Beta-Iron Disilicide Nanowires Formed through Chemical Vapor Deposition [O] . Wei-Jie Huang, Yu-Yang Chen, Hsiu-Ming Hsu, 2018

机译：通过化学气相沉积形成单晶硅化铁和β-二硅化铁纳米线
7. Single Crystalline Higher Manganese Silicide Nanowire Arrays with Outstanding Physical Properties through Double Tube Chemical Vapor Deposition [O] . Chin-Li Shen, Shu-Meng Yang, Kuo-Chang Lu 2020

机译：单晶高级锰硅化物纳米线阵列，通过双管化学气相沉积具有出色的物理性质
8. Conditions for Tunnel Formation in LPCVD (Low Pressure Chemical Vapor Deposition) Tungsten Films on Single Crystal Silicon [R] . Blewer, R. S. , Headley, T. J. , Tracy, M. E. 1987

机译：单晶硅上LpCVD（低压化学气相沉积）钨膜隧道形成条件

Single Crystalline Iron Silicide and Beta-Iron Disilicide Nanowires Formed through Chemical Vapor Deposition

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