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X‐ray response of silicon surface‐barrier diodes at 8 and 17.5 keV: Evidence that the x‐ray sensitive depth is not generally the depletion depth

机译：硅表面屏障二极管的X射线响应在8和17.5 keV：证据表明X射线敏感深度通常不是耗尽深度

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作者
Kevin W. Wenzel; Richard D. Petrasso;
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年度 1988
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7. X-ray response of silicon surface barrier diodes at 8 and 17.5 keV: evidence that the x-ray sensitive depth is not generally the depletion depth [O] . Wenzel K.W., Petrasso R.D. 1988

机译：硅表面势垒二极管在8和17.5 keV的X射线响应：证明X射线敏感深度通常不是耗尽深度

X‐ray response of silicon surface‐barrier diodes at 8 and 17.5 keV: Evidence that the x‐ray sensitive depth is not generally the depletion depth

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