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Direct Growth of a GaInP/GaAs/Si Triple‐Junction Solar Cell with 22.3 AM1.5g Efficiency

机译：GAINP / GAAS / SI三界太阳能电池直接增长，效率为22.3％

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Markus Feifel; David Lackner; Jens Ohlmann; Jan Benick; Martin Hermle; Frank Dimroth;
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1. Two-Terminal Direct Wafer-Bonded GaInP/AlGaAs//Si Triple-Junction Solar Cell with AM1.5g Efficiency of 34.1% [J] . David Lackner, Oliver Hoehn, Ralph Mueller, Solar RRL . 2020,第9期

机译：双端直接晶圆键合GainP / Algaas // Si三界太阳能电池为am1.5g效率为34.1％
2. Epitaxial GaInP/GaAs/Si Triple-Junction Solar Cell with 25.9% AM1.5g Efficiency Enabled by Transparent Metamorphic Al_xGa_(1-x)As_Yp_(1-y) Step-Graded Buffer Structures [J] . Markus Feifel, David Lackner, Jonas Schoen, Solar RRL . 2021,第5期

机译：外延增益/ GaAs / Si三界太阳能电池，透明变质AL_XGA_（1-x）AS_YP_（1-Y）阶梯分级缓冲结构，使能为25.9％AM1.5G效率
3. High-efficiency GaInP/GaAs/InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction [J] . J. F. Geisz, Sarah Kurtz, M. W. Wanlass, Applied Physics Letters . 2007,第2期

机译：高效GaInP / GaAs / InGaAs三结太阳能电池，通过变质底部结反向生长
4. Numerical simulation on high-efficiency GaInP/GaAs/InGaAs triple-junction solar cells [C] . Shu-Hsuan Chang, Miao-Chan Tsai, Sheng-Horng Yen, SPIE Conference on Physics and Simulation of Optoelectronic Devices . 2010

机译：高效增益/ GaAs / InGaAs三轭太阳能电池数值模拟
5. Optimal Junction Parameters to Improve The Quantum Efficiency of Multi-junction Perovskite / III-V Solar Cells [D] . Rentschler, Micah D. 2019

机译：最佳结参数，提高多结钙钛矿/ III-V太阳能电池量子效率
6. Improving Radiation Resistance of GaInP/GaInAs/Ge Triple-Junction Solar Cells Using GaInP Back-Surface Field in the Middle Subcell [O] . Hui Gao, Ruixia Yang, Yonghui Zhang 2020

机译：使用中间子电池中的GaInP后表面场提高GaInP / GaInAs / Ge三结太阳能电池的抗辐射能力
7. Two‐Terminal Direct Wafer‐Bonded GaInP/AlGaAs//Si Triple‐Junction Solar Cell with AM1.5g Efficiency of 34.1 [O] . David Lackner, Oliver Höhn, Ralph Müller, 2020

机译：双端直接晶圆键合GainP / Algaas // Si三界太阳能电池为am1.5g效率为34.1％
8. Inverted GaInP/(In)GaAs/InGaAs Triple-Junction Solar Cells with Low-Stress Metamorphic Bottom Junctions: Preprint [R] . Moriarty, T. E., Kiehl, J. T., Romero, M. J., 2008

机译：具有低应力变质底部结的倒置GaInp /（In）Gaas / InGaas三结太阳能电池：预印

Direct Growth of a GaInP/GaAs/Si Triple‐Junction Solar Cell with 22.3 AM1.5g Efficiency

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