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III–V tri-gate quantum well MOSFET: Quantum ballistic simulation study for 10 nm technology and beyond

机译：III-V Tri-Gate量子阱MOSFET：10 NM技术及超越的量子弹道仿真研究

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Kanak Datta; Quazi D.M. Khosru;
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年度 2016
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1. III-V tri-gate quantum well MOSFET: Quantum ballistic simulation study for 10 nm technology and beyond [J] . Datta Kanak, Khosru Quazi D. M. Solid-State Electronics . 2016,第Apra期

机译：III-V三栅量子阱MOSFET：针对10 nm及更高技术的量子弹道仿真研究
2. Modeling and simulation of nanoscale tri-gate MOSFETs including quantum effects [J] . P. Vimala, N. B. Balamurugan Journal of Semiconductors . 2014,第3期

机译：包括量子效应的纳米级三栅MOSFET的建模和仿真
3. High-performance logic transistor DC benchmarking toward 7 nm technology-node between III-V and Si tri-gate n-MOSFETs using virtual-source injection velocity model [J] . Baek Rock-Hyun, Kim Jin Su, Kim Do-Kywn, Solid-State Electronics . 2016,第FEBa期

机译：使用虚拟源注入速度模型，将高性能逻辑晶体管DC基准化为III-V和Si三栅极n-MOSFET之间的7 nm技术节点
4. Quantum ballistic simulation study of In0.7Ga0.3As/InAs/In0.7Ga0.3As Quantum Well MOSFET [C] . Biswas Sudipta Romen, Datta Kanak, Shadman Abir, International Conference on Electrical and Computer Engineering . 2014

机译：In 0.7 Ga 0.3 As / InAs / InAs / In 0.7 Ga 0.3 As量子阱MOSFET的量子弹道仿真研究
5. Modeling quantum and Coulomb effects in nanoscale enhancement-mode tri-gate III-V MOSFETs [D] . Alsibiani, Sameer 2015

机译：在纳米级增强模式三栅极III-V MOSFET中建模量子和库仑效应
6. Simulation studies of instrumental artifacts on spin I=1 double quantum filtered NMR spectroscopy [O] . Cheng Sun, Gregory S. Boutis -1

机译：自旋器乐伪影的模拟研究I = 1的双量子过滤NmR光谱
7. Performance Analysis of TaSiOx Inspired Sub-10 nm Energy Efficient In0.53Ga0.47As Quantum Well Tri-Gate Technology [O] . Sarat K. Saluru, Jheng-Sin Liu, Mantu K. Hudait 2017

机译：Tasiox灵感分析的性能分析IN0.53GA0.47AS井三门技术
8. Increase in the Random Dopant Induced Threshold Fluctuations and Lowering in Sub 100 nm MOSFETs Due to Quantum Effects: A 3-D Density-Gradient Simulation Study [R] . Asenov, Asen, Slavcheva, G., Brown, A. R., 2000

机译：由量子效应引起的随机掺杂剂诱导阈值波动和低于100 nm mOsFET的降低：三维密度梯度模拟研究

III–V tri-gate quantum well MOSFET: Quantum ballistic simulation study for 10 nm technology and beyond

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