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Two‐Terminal Direct Wafer‐Bonded GaInP/AlGaAs//Si Triple‐Junction Solar Cell with AM1.5g Efficiency of 34.1

机译：双端直接晶圆键合GainP / Algaas // Si三界太阳能电池为am1.5g效率为34.1％

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David Lackner; Oliver Höhn; Ralph Müller; Paul Beutel; Patrick Schygulla; Hubert Hauser; Felix Predan; Gerald Siefer; Michael Schachtner; Jonas Schön; Jan Benick; Martin Hermle; Frank Dimroth;
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1. Two-Terminal Direct Wafer-Bonded GaInP/AlGaAs//Si Triple-Junction Solar Cell with AM1.5g Efficiency of 34.1% [J] . David Lackner, Oliver Hoehn, Ralph Mueller, Solar RRL . 2020,第9期

机译：双端直接晶圆键合GainP / Algaas // Si三界太阳能电池为am1.5g效率为34.1％
2. Epitaxial GaInP/GaAs/Si Triple-Junction Solar Cell with 25.9% AM1.5g Efficiency Enabled by Transparent Metamorphic Al_xGa_(1-x)As_Yp_(1-y) Step-Graded Buffer Structures [J] . Markus Feifel, David Lackner, Jonas Schoen, Solar RRL . 2021,第5期

机译：外延增益/ GaAs / Si三界太阳能电池，透明变质AL_XGA_（1-x）AS_YP_（1-Y）阶梯分级缓冲结构，使能为25.9％AM1.5G效率
3. Investigation of room-temperature wafer bonded GaInP/GaAs/InGaAsP triple-junction solar cells [J] . Yang Wen-xian, Dai Pan, Ji Lian, Applied Surface Science . 2016,第deca15期

机译：室温晶圆键合GaInP / GaAs / InGaAsP三结太阳能电池的研究
4. Wafer-bonded GaInP/GaAs/GaInAs//GaSb four-junction solar cells with 43.8 efficiency under concentration [C] . Felix Predan, Alexander Franke, Oliver Hoehn, IEEE Photovoltaic Specialists Conference . 2020

机译：晶圆键合的GAAC / GAAS / GAINAS // GASB四联的太阳能电池，浓度效率为43.8％
5. The Effect of Offcut Angle on Electrical Conductivity of Direct Wafer-Bonded n-Gallium Arsenide/n-Gallium Arsenide Structures for Wafer-Bonded Tandem Solar Cells [D] . Yeung, King Wah Sunny 2012

机译：切角对晶片键合串联太阳能电池直接晶片键合的n-砷化镓/ n-砷化镓结构电导率的影响
6. Improving Radiation Resistance of GaInP/GaInAs/Ge Triple-Junction Solar Cells Using GaInP Back-Surface Field in the Middle Subcell [O] . Hui Gao, Ruixia Yang, Yonghui Zhang 2020

机译：使用中间子电池中的GaInP后表面场提高GaInP / GaInAs / Ge三结太阳能电池的抗辐射能力
7. Direct Growth of a GaInP/GaAs/Si Triple‐Junction Solar Cell with 22.3 AM1.5g Efficiency [O] . Markus Feifel, David Lackner, Jens Ohlmann, 2019

机译：GAINP / GAAS / SI三界太阳能电池直接增长，效率为22.3％
8. Inverted GaInP/(In)GaAs/InGaAs Triple-Junction Solar Cells with Low-Stress Metamorphic Bottom Junctions: Preprint [R] . Moriarty, T. E., Kiehl, J. T., Romero, M. J., 2008

机译：具有低应力变质底部结的倒置GaInp /（In）Gaas / InGaas三结太阳能电池：预印

Two‐Terminal Direct Wafer‐Bonded GaInP/AlGaAs//Si Triple‐Junction Solar Cell with AM1.5g Efficiency of 34.1

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