首页> 外文OA文献 >Full compositional control of PbSxSe1−x thin films by the use of acylchalcogourato lead(ii) complexes as precursors for AACVD

【2h】

Full compositional control of PbSxSe1−x thin films by the use of acylchalcogourato lead(ii) complexes as precursors for AACVD

机译：通过使用酰基-Cogourato铅（II）复合物作为AacVD的前体的PBSXSe1-X薄膜的完全组成控制

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
Tagbo Emmanuel Ezenwa; Paul D. McNaughter; James Raftery; David J. Lewis; Paul OBrien;
展开▼
作者单位

展开▼
年度 2018
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Full compositional control of PbSxSe1-x thin films by the use of acylchalcogourato lead(ii) complexes as precursors for AACVD [J] . Ezenwa Tagbo Emmanuel, McNaughter Paul D., Raftery James, Dalton transactions: An international journal of inorganic chemistry . 2018,第47期

机译：通过使用酰基-Cogourato铅（II）复合物作为AacVD的前体的PBSXSe1-X薄膜的完全组成控制
2. Composition and Band Gap Controlled AACVD of ZnSe and ZnS_xSe_1-x Thin Films Using Novel Single Source Precursors [J] . Yousef Alghamdi Materials Sciences and Applications . 2017,第10期

机译：新型单源前驱体对ZnSe和ZnS _{x Se _{1-x 薄膜的组成和带隙控制的AACVD}}
3. Symmetrical and unsymmetrical nickel(II) complexes of N-(dialkylcarbamothioyl)-nitro substituted benzamide as single-source precursors for deposition of nickel sulfide nanostructured thin films by AACVD (vol 85, pg 267, 2015) [J] . Saeed Sohail, Ahmed Khuram Shahzad, Rashid Naghmana, Polyhedron: The International Journal for Inorganic and Organometallic Chemistry . 2015,第Null期

机译：N-（二烷基氨基甲硫酰基）-硝基取代的苯甲酰胺的对称和不对称镍（II）络合物作为单源前体，用于通过ACVD沉积硫化镍纳米结构薄膜（vol 85，pg 267，2015）
4. ZnS, CdS and Zn_xCd_(1-x)S Thin Films from Zn(II) and Cd(II) Complexes of 1,1,5,5-Tetramcthyl -2-4-dithiobiuret As Single Molecular Precursors [C] . Karthik Ramasamv, Mohammad A.Malik, Paul OBrien Materials Research Society Symposium . 2008

机译：来自Zn（II）的ZnS，Cds和Zn_XCD_（1-X）S薄膜和1,1,5,5-四羟基硫基-2-4-二硫代脲的CD（II）复合物作为单分子前体
5. I. Synthesis of metal-organic chemical vapor deposition precursors and their use in oxide thin film depositions and II. Synthesis of monomeric tantalum(IV) amido complexes. [D] . Suh, Seigi. 1996

机译：I.金属有机化学气相沉积前体的合成及其在氧化物薄膜沉积中的用途II。单体钽（IV）酰胺配合物的合成。
6. Nanostructured Lead Sulphide Depositions by AACVD Technique Using Bis(Isobutyldithiophosphinato)Lead(II) Complex as Single Source Precursor and Its Impedance Study [O] . Sadia Iram, Azhar Mahmood, Effat Sitara, 2020

机译：使用双（异丁二硫代磷脂）铅（II）复合物作为单一源前体的AACVD技术纳米结构铅硫化物沉积及其阻抗研究
7. Heterocyclic dithiocarbamato-iron(III) complexes: single-source precursors for aerosol-assisted chemical vapour deposition (AACVD) of iron sulfide thin films [O] . Mlowe, Sixberth, Lewis, David J., Malik, Mohammad Azad, 2016

机译：杂环二硫代氨基甲酸 - 铁（III）配合物：用于硫化铁薄膜的气溶胶辅助化学气相沉积（aaCVD）的单源前体

Full compositional control of PbSxSe1−x thin films by the use of acylchalcogourato lead(ii) complexes as precursors for AACVD

著录项

引文网络

相似文献

相关主题

期刊订阅