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Combined model of non-conformal layer growth for accurate optical simulation of thin-film silicon solar cells

机译:薄膜硅太阳能电池精确光学仿真的非共形层生长的组合模型

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摘要

In thin-film silicon solar cells textured interfaces are introduced, leading to improved antireflection and light trapping capabilities of the devices. Thin-layers are deposited on surface-textured substrates or superstrates and the texture is translated to internal interfaces. For accurate optical modelling of the thin-film silicon solar cells it is important to define and include the morphology of textured interfaces as realistic as possible. In this paper we present a model of thin-layer growth on textured surfaces which combines two growth principles: conformal and isotropic one. With the model we can predict the morphology of subsequent internal interfaces in thin-film silicon solar cells based on the known morphology of the substrate or superstrate. Calibration of the model for different materials grown under certain conditions is done on various cross-sectional scanning electron microscopy images of realistic devices. Advantages over existing growth modelling approaches are demonstrated—one of them is the ability of the model to predict and omit the textures with high possibility of defective regions formation inside the Si absorber layers. The developed model of layer growth is used in rigorous 3-D optical simulations employing the COMSOL simulator. A sinusoidal texture of the substrate is optimised for the case of a micromorph silicon solar cell. More than a 50 % increase in short-circuit current density of the bottom cell with respect to the flat case is predicted, considering the defect-free absorber layers. The developed approach enables accurate prediction and powerful design of current-matched top and bottom cell.
机译:在薄膜硅太阳能电池中引入纹理接口,导致设备的抗反射和光捕获能力。薄层沉积在表面纹理的基板上或超级贴物,纹理被翻译成内部接口。对于薄膜硅太阳能电池的精确光学建模,重要的是要定义和包括尽可能逼真的纹理接口的形态。在本文中,我们呈现了纹理表面上的薄层生长模型,其结合了两个生长原则:保形和各向同性的表面。利用该模型,我们可以基于基材的已知形态或超级晶体来预测薄膜硅太阳能电池中随后的内部接口的形态。在某些条件下种植的不同材料模型的校准是在现实设备的各种横截面扫描电子显微镜图像上进行的。对现有生长建模方法的优点进行了证明 - 其中一个是模型预测和省略具有高可能在Si吸收层内部形成的纹理的能力。层生长的开发模型用于采用COMSOL模拟器的严格3-D光学模拟。针对微观硅太阳能电池的情况进行了优化了基板的正弦纹理。考虑到无缺陷的吸收层,预测了底部电池短路电流密度增加超过50%。开发的方法使电流匹配的顶部和底部单元的准确预测和强大的设计能够实现精确的预测和强大的设计。

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