A facile, self-seeded , solution–liquid–solid growth of soluble InP and GaP nanowires with a very low amount of native point defects with respect to the carrier concentrations have been synthesized (see scheme) and characterized. They are potentially promising building blocks in optoelectronic applications. We demonstrate a facile method for self-seeded, solution–liquid–solid growth of soluble InP and GaP nanowires at a temperature of ≈300 °C. Both types of nanowires are single crystals with very small diameters. The synthesized InP nanowires are almost defect-free, whereas the GaP nanowires have some microtwins. The effect of reaction temperatures and input ligand/III/V (III and V indicate elements of Group 13 and 15 respectively) ratios on wire formation is discussed, and two competitive chemical pathways involved in the nanowire formation are proposed. In addition, electrical properties of these III–V nanowires, generated from the solution-based approach, were investigated for the first time. The current-voltage ( I–V ) and room temperature resistance investigations indicate that both InP and GaP nanowires possess very low native point defects for carrier concentrations and they could be potentially promising building blocks in optoelectronic applications.
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