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Influence of Illumination on Porous Silicon Formed by Photo-Assisted Etching of p-Type Si with a Different Doping Level

机译：用不同掺杂水平对P型Si光辅助蚀刻形成多孔硅的影响

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Olga Volovlikova; Sergey Gavrilov; Petr Lazarenko;
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年度 2020
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专利

1. Impact of doping level on the metal assisted chemical etching of p-type silicon [J] . A. Backes, U. Schmid Sensors and Actuators . 2014,第mara31a期

机译：掺杂水平对p型硅金属辅助化学刻蚀的影响
2. Influence of the doping type and level on the morphology of porous Si formed by galvanic etching [J] . Pyatilova O. V., Gavrilov S. A., Shilyaeva Yu. I., Semiconductors . 2017,第2期

机译：掺杂类型和水平对电镀蚀刻形成的多孔Si形态的影响
3. The Effect of the Doping Level of Starting Silicon Single Crystals on Structural Parameters of Porous Silicon Produced by Electrochemical Etching [J] . Zegrya A. G., Sokolov V. V., Zegrya G. G., Technical physics letters: Letters to the Russian journal of applied physics . 2019,第11期

机译：起始硅单晶掺杂水平对电化学蚀刻产生多孔硅结构参数的影响
4. Effects of Electrochemical Etching Conditions on the Formation and Photoluminescence Properties of P-Type Porous Silicon [C] . Le Lu, Wenbing Li, Liqiang Zhang Annual International Conference on Material Engineering and Application . 2019

机译：电化学蚀刻条件对P型多孔硅形成和光致发光性能的影响
5. ELECTRICAL CHARACTERIZATION OF DEEP LEVEL IMPURITIES IN SEMICONDUCTOR JUNCTIONS: SCHOTTKY BARRIERS OF HAFNIUM ON INDIUM DOPED P-TYPE SILICON. [D] . BEGUWALA, MOIZ MULLA ENAYATALI. 1975

机译：半导体结中深层杂质的电学表征：掺D的P型硅上的肖特基势垒。
6. Influence of Illumination on Porous Silicon Formed by Photo-Assisted Etching of p-Type Si with a Different Doping Level [O] . Olga Volovlikova, Sergey Gavrilov, Petr Lazarenko 2020

机译：照明对不同掺杂水平的p型硅光辅助刻蚀形成多孔硅的影响
7. Formation and Evaluation of Silicon Substrate with Highly-Doped Porous Si Layers Formed by Metal-Assisted Chemical Etching [O] . Yijie Li, Nguyen Van Toan, Zhuqing Wang, 2021

机译：用金属辅助化学蚀刻形成高掺杂多孔Si层的硅衬底的形成与评价
8. Effects of high doping levels silicon solar cell performance [R] . Godlewski, M. P., Brandhorst, H. W., Jr., Baraona, C. R. 1975

机译：高掺杂水平对硅太阳能电池性能的影响

Influence of Illumination on Porous Silicon Formed by Photo-Assisted Etching of p-Type Si with a Different Doping Level

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