首页> 外文OA文献 >Electrodeposition of Indium on Glassy Carbon from Tetrabutylammonium Chloride Containing Solutions
【2h】

Electrodeposition of Indium on Glassy Carbon from Tetrabutylammonium Chloride Containing Solutions

机译:从含四丁基氯化物溶液中的玻璃碳电沉积铟

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

The effectiveness of tetrabutylammonium chloride (TBACh) as inhibition additive of dendritic growth of indium has been investigated by means of cyclic voltammetry and chronoamperometry methods. The rotating disk electrode (RDE) method allowed the calculation of the diffusion coefficient of In3+ ions using the Levich equation, at 25 °C is 4.41 × 10–6 cm2/s. Diffusion coefficient of indium ions determined by chronoamperometry using the Cottrell law (6.63 × 10–6 cm2/s) is in consistent with the value calculated by the Levich equation. The addition of tetrabutylammonium ions to the electrolyte reduces the diffusion coefficient and inhibits the cathodic process by increasing the activation energy from 10.5 kJ/mol to 20.7 kJ/mol. The indium nucleation and growth on glassy carbon in chloride solutions was studied by single potentiostatic pulse techniques. The nucleation mechanism was evaluated by analyzing the influence of different TBACh ion concentration and applied potentials. The electrocrystallization mechanisms were determined by fitting the experimental non-dimensional current transients on the basis nucleation and growth model developed by Scharifker-Hills. The type of nucleation corresponding to the progressive three-dimensional nucleation with diffusion control is determined. Based on theoretical models of 3D multiple nucleation from the potentiostatic current transients were calculated nucleation characteristics, such as the stationary nucleation rate, saturation nucleus density and the average grains radius of indium deposits. The leveling action of TBACh on the electrodeposition of indium at concentration of 10-4 M was found.
机译:通过循环伏安法和计时法研究了四丁基氯化铵(TBACH)作为铟的抑制添加剂的抑制添加剂。旋转盘电极(RDE)方法允许使用Levich方程计算In3 +离子的扩散系数,在25℃下是4.41×10-6cm 2 / s。使用COTTRELL LAVE(6.63×10-6cm 2 / s的计时法测定的铟离子的扩散系数与由Levich方程计算的值一致。向电解质中加入四丁基铵离子降低了扩散系数,并通过将活化能从10.5kj / mol增加至20.7kj / mol来抑制阴极工艺。通过单级稳压脉冲技术研究了氯化物溶液中玻璃碳的铟成核和生长。通过分析不同Tbach离子浓度和施加电位的影响来评估成核机理。通过将实验性无尺寸电流瞬变拟合在Scharifker-Hills开发的基础成核和生长模型上来确定电镀化机制。确定与具有扩散控制的渐进式三维成核对应的成核的类型。基于3D的理论模型,从电位电流瞬变的3D多成核的基础是计算成核特性,例如固定成核速率,饱和核密度和铟沉积物的平均晶粒半径。发现,发现TBACH对浓度为10-4米的铟电沉积的调平作用。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号