A High Resolution CMOS Imager With Active Pixel Using Capacitively Coupled Bipolar Operation

摘要

The active pixel sensor technology promises highudperformance than conventional CCD imagers. This paperudreports a new high resolution CMOS imager with oneudtransistor active pixel sensing based on capacitor-coupledudbipolar action. The base capacitor is pulsed negatively forudimage integration and positively for image sensing. The pixel size is 5.9um x 5.9um (on 0.8um design rule). The prototype imager has an array of 480 x 640 and operating at 5v Vcc. This active pixel structure is promising for future high-performance and high-density imagers in the information highway era.