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Comments on the Measurement of Dislocation Mobility and the Drag Due to Phonons and Electrons

机译:关于位错迁移率的测量以及声子和电子的阻力的评论

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摘要

Experimental methods for the measurement of intrinsic interactionsudbetween moving dislocations and the crystal lattice are considered. It is emphasized that the stress pulse method is applicableudat stress levels greater than about twice the static flow stress, whileudinternal friction experiments may be used to explore the interaction atudvery low stress levels and small dislocation velocities. Recent resultsudof low temperature stress pulse measurements in Cu are presented.udThe interactions deduced from measurements between 4.2°K and 400°Kudin some FCC metals are compared to theoretical predictions. Suggestions are made for future theoretical and experimental work on unresolvedudaspects of the intrinsic interactions.
机译:考虑了测量移动位错与晶格之间本征相互作用的实验方法。需要强调的是,应力脉冲方法适用于应力水平大于静态流动应力两倍的情况,而内部摩擦实验可用于探索在应力水平过低和位错速度较小时的相互作用。给出了最近的结果在铜中进行低温应力脉冲测量的结果。 ud将某些FCC金属中4.2°K至400°K之间的测量结果推导的相互作用与理论预测进行了比较。对未解决的内在相互作用的怀疑提出了今后的理论和实验工作的建议。

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