首页> 外文OA文献 >Decomposition of trimethylgallium and adduct formation in a metalorganic vapor phase epitaxy reactor analyzed by high‐resolution gas monitoring system

【2h】

Decomposition of trimethylgallium and adduct formation in a metalorganic vapor phase epitaxy reactor analyzed by high‐resolution gas monitoring system

机译：高分辨率气体监测系统分析的金属有机气相外延反应器中三甲基镓和加合物形成的分解

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

AI期刊论文写作 >>

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
Kentaro Nagamatsu; Shugo Nitta; Zheng Ye; Hirofumi Nagao; Shinichi Miki; Yoshio Honda; Hiroshi Amano;
展开▼
作者单位

展开▼
年度 2017
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Decomposition of trimethylgallium and adduct formation in a metalorganic vapor phase epitaxy reactor analyzed by high-resolution gas monitoring system [J] . Nagamatsu Kentaro, Nitta Shugo, Ye Zheng, Physica status solidi, B. Basic research . 2017,第8期

机译：高分辨率气体监测系统分析的金属有机气相外延反应器中三甲基镓和加合物形成的分解
2. The effect of trimethylgallium flows in the AllnGaN barrier on optoelectronic characteristics of near ultraviolet light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy [J] . Yi-Keng Fu, Ren-Hao Jiang, Yu-Hsuan Lu, Applied Physics Letters . 2011,第12期

机译：三甲基镓在AllnGaN势垒中的流动对大气压金属有机气相外延生长的近紫外发光二极管的光电特性的影响
3. Metalorganic vapor-phase epitaxy of GaN from trimethylgallium and tertiarybutylhydrazine [J] . Yu Jen Hsu, Lu Sheng Hong, Jing En Tsay Journal of Crystal Growth . 2003,第1a3期

机译：三甲基镓和叔丁基肼对GaN的金属有机气相外延
4. Selective area growth and epitaxial lateral overgrowth of GaN by metalorganic vapor phase epitaxy and hydride vapor phase epitaxy [C] . Kazumasa Hiramatsu, Hidetada Matsushima, Takumi Shibata, Symposium L on nitrides and related wide band gap materials of the E-MRS conference . 1999

机译：金属有机气相外延和氢化物气相外延的选择性地区生长和外延横向过度生长
5. Reactor design and reaction engineering studies related to metalorganic vapor phase epitaxy of compound semiconductors. [D] . Gupta, Vijay. 1997

机译：与化合物半导体的金属有机气相外延有关的反应器设计和反应工程研究。
6. CH4 Adsorption Probability on GaN(0001) and (000−1) during Metalorganic Vapor Phase Epitaxy and Its Relationship to Carbon Contamination in the Films [O] . Akira Kusaba, Guanchen Li, Pawel Kempisty, 2019

机译：有机金属气相外延过程中GaN（0001）和（000-1）的CH4吸附概率及其与膜中碳污染的关系
7. Decomposition, diffusion, and growth rate anisotropies in self-limited profiles during metalorganic vapor-phase epitaxy of seeded nanostructures [O] . Pelucchi, E, Dimastrodonato, V, Rudra, A, 2011

机译：种子纳米结构金属有机气相外延过程中自限曲线的分解，扩散和生长速率各向异性
8. Metalorganic Vapor Phase Epitaxy 1986. Proceedings of the International Conference on Metalorganic Vapor Phase Epitaxy (3rd) Held April 13-17, 1986 in Universal City, California [R] . Stringfellow, G. B. 1986

机译：金属有机气相外延1986.金属有机气相外延国际会议论文集（第3期）于1986年4月13日至17日在加利福尼亚州环球城举行

Decomposition of trimethylgallium and adduct formation in a metalorganic vapor phase epitaxy reactor analyzed by high‐resolution gas monitoring system

著录项

引文网络

相似文献

相关主题

期刊订阅