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Effects of Surface Engineering of Copper Catalyst on the CVD Growth of Boron-Doped Graphene with a Solid Carbon and Boron Source

机译：铜催化剂表面工程对硼掺杂石墨烯CVD生长的影响，具有固体碳和硼源

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Cong Wang; Chengchen Xu;
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1. Effects of Surface Engineering of Copper Catalyst on the CVD Growth of Boron-Doped Graphene with a Solid Carbon and Boron Source [J] . Cong Wang, Chengchen Xu Coatings . 2021,第5期

机译：铜催化剂表面工程对硼掺杂石墨烯CVD生长的影响，固体碳和硼源
2. A first principles study on the CVD graphene growth on copper surfaces: A carbon atom incorporation to graphene edges [J] . Tajima Nobuo, Kaneko Tomoaki, Nara Jun, Surface Science . 2016,第NOVa期

机译：关于铜表面上CVD石墨烯生长的第一个原理研究：碳原子结合到石墨烯边缘
3. The over-step coalescence of carbon atoms on copper surface in the CVD growth of graphene: density functional calculations [J] . Yingfeng Li, Meicheng Li, TianSheng Gu, AIP Advances . 2013,第5期

机译：石墨烯的CVD生长过程中铜表面碳原子的超步聚结：密度泛函计算
4. Graphene growth on SiC and metal surfaces by solid carbon source deposition [C] . W. C. Mitchel, J. H. Park, H. E. Smith Materials Research Society Symposium . 2010

机译：通过固体碳源沉积的SiC和金属表面上的石墨烯生长
5. Finite element modeling the solid phase epitaxial growth of boron-doped silicon layers. [D] . Hong, Sang-Min. 2005

机译：有限元模拟掺硼硅层的固相外延生长。
6. Growth of Hexagonal Columnar Nanograin Structured SiC Thin Films on Silicon Substrates with Graphene–Graphitic Carbon Nanoflakes Templates from Solid Carbon Sources [O] . Xingfang Liu, Guosheng Sun, Bin Liu, 2013

机译：固碳源的石墨烯-石墨碳纳米薄片模板在硅基底上生长六方柱状纳米晶结构的SiC薄膜
7. The over-step coalescence of carbon atoms on copper surface in the CVD growth of graphene: density functional calculations [O] . Yingfeng Li, Meicheng Li, TianSheng Gu, 2013

机译：石墨烯CVD生长过程中铜表面碳原子的过度聚结：密度泛函计算
8. Surface chemistry of boron-doped SiO(sub 2) CVD: Enhanced uptake of tetraethyl orthosilicate by hydroxyl groups bonded to boron. [R] . Bartram, M. E., Moffat, H. K. 1993

机译：硼掺杂siO（sub 2）CVD的表面化学：通过与硼键合的羟基增强对原硅酸四乙酯的吸收。

Effects of Surface Engineering of Copper Catalyst on the CVD Growth of Boron-Doped Graphene with a Solid Carbon and Boron Source

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