首页> 外文OA文献 >Polarization rotator based on augmented low-index-guiding waveguide on silicon nitride/silicon-on-insulator platform
【2h】

Polarization rotator based on augmented low-index-guiding waveguide on silicon nitride/silicon-on-insulator platform

机译:氮化硅/绝缘体上硅平台上基于增强低折射率导引波导的偏振旋转器

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

Using a newly proposed augmented low-index-guiding scheme with silicon nitride/silicon dual-core waveguide, we have designed, fabricated, and characterized a transverse electric (TE) to transverse magnetic (TM) and TM-to-TE compact polarization rotator. The polarization rotation is realized in an asymmetric directional coupler. The measured peak conversion efficiencies for the TE-to-TM and TM-to-TE rotations are approximately 97%. The measured polarization extinction ratio for the TE-to-TM rotation is greater than 20 dB over 50-nm bandwidth, while for the TM-to-TE rotation it is greater than 15 dB over the C-band.
机译:使用新提出的具有氮化硅/硅双芯波导的增强型低折射率导引方案,我们设计,制造并表征了横向电(TE)到横向磁(TM)和TM-to-TE紧凑型偏振旋转器。极化旋转是在非对称定向耦合器中实现的。对于TE-to-TM和TM-to-TE旋转,测得的峰值转换效率约为97%。在50-nm带宽上,TE-to-TM旋转测得的偏振消光比大于20 dB,而TM-to-TE旋转测得的偏振消光比在C波段大于15 dB。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号