Charge-coupled devices detectors with high quantum efficiency at UV wavelengths

摘要

We report on multilayer high efficiency antireflection coating (ARC) design and development for use at UV wavelengths on CCDs and other Si-based detectors. We have previously demonstrated a set of single-layer coatings, which achieve >50% quantum efficiency (QE) in four bands from 130 to 300 nm. We now present multilayer coating designs that significantly outperform our previous work between 195 and 215 nm. Using up to 11 layers, we present several model designs to reach QE above 80%. We also demonstrate the successful performance of 5 and 11 layer ARCs on silicon and fused silica substrates. Finally, we present a five-layer coating deposited onto a thinned, delta-doped CCD and demonstrate external QE greater than 60% between 202 and 208 nm, with a peak of 67.6% at 206 nm.