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Spatially Resolved Inhomogeneous Ferromagnetism in(Ga,Mn)AsDiluted Magnetic Semiconductors: A Microscopic Study by Muon Spin Relaxation

机译:在(Ga,Mn)asdiluted磁半导体中的空间上分离的不均匀铁磁性:Muon旋转松弛的微观研究

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摘要

Thin epitaxial films of the diluted magnetic semiconductor (DMS) GaMnAs have been studied by low energy muon spin rotation and relaxation (LE-µSR) as well as by transport and magnetization measurement techniques. LE-µSR allows measurements of the distribution of magnetic field on the nanometer scale inaccessible to traditional macroscopic techniques. The spatial inhomogeneity of the magnetic field is resolved: although homogeneous above Tc, below Tc the DMS consists of ferromagnetic and paramagnetic regions of comparable volumes. In the ferromagnetic regions the local field inhomogeneity amounts to 0.03 T.
机译:通过低能量μ子自旋旋转和弛豫(Le-μSR)以及通过运输和磁化测量技术,研究了稀释的磁半导体(DMS)Gamnas的薄外延薄膜。 Le-μSR允许对传统宏观技术无法进入纳米级磁场分布的测量。磁场的空间不均匀性被解决:虽然高于TC的均匀,但低于TC的DMS由可比体积的铁磁性和顺磁区域组成。在铁磁区中,局部场的不均匀性达0.03吨。

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