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Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface‐Engineered Hf 0.5 Zr 0.5 O 2 Tunnel Devices

机译：堵塞导电通道扩大了界面工程HF 0.5 ZR 0.5 O 2隧道器件中的铁电电阻切换的窗口

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Milena Cervo Sulzbach; Saúl Estandía; Jaume Gàzquez; Florencio Sánchez; Ignasi Fina; Josep Fontcuberta;
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1. Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface-Engineered Hf_(0.5)Zr_(0.5)O_2 Tunnel Devices [J] . Sulzbach Milena Cervo, Estandia Saul, Gazquez Jaume, Advanced Functional Materials . 2020,第32期

机译：堵塞导电通道扩大了界面工程化HF_（0.5）ZR_（0.5）O_2隧道器件中的铁电电阻切换的窗口
2. Ferroelectricity and ferroelectric resistive switching in sputtered Hf_(0.5)Zr_(0.5)O_2 thin films [J] . Zhen Fan, Juanxiu Xiao, Jingxian Wang, Applied Physics Letters . 2016,第23期

机译：溅射Hf_（0.5）Zr_（0.5）O_2薄膜中的铁电和铁电电阻转换
3. Effect of Polarization Reversal in Ferroelectric TiN/Hf0.5Zr0.5O2/TiN Devices on Electronic Conditions at Interfaces Studied in Operando by Hard X-ray Photoemission Spectroscopy [J] . Matveyev Yury, Negrov Dmitry, Chernikova Anna, ACS applied materials & interfaces . 2017,第49期

机译：铁电锡/ HF0.5ZR0.502 / TIN装置对铁射线照相光谱法研究界面界面电子条件的影响
4. First Direct Experimental Studies of Hf0.5Zr0.5O2 Ferroelectric Polarization Switching Down to 100-picosecond in Sub-60mV/dec Germanium Ferroelectric Nanowire FETs [C] . Wonil Chung, Mengwei Si, Pragya R. Shrestha, IEEE Symposium on VLSI Technology . 2018

机译：在亚60mV / dec锗铁电纳米线FET中Hf 0.5 Zr 0.5 O 2 铁电极化转换至100皮秒的直接实验研究
5. Design, fabrication and characterization of N-channel InGaAsP-InP based inversion channel technology devices (ICT) for optoelectronic integrated circuits (OEIC): Double heterojunction optoelectronic switches (DOES), heterojunction field-effect transistors (HFET), bipolar inversion channel field-effect transistors (BICFET) and bipolar inversion channel phototransistors (BICPT). [D] . Tan, Eugene. 1998

机译：基于N沟道InGaAsP-InP的倒置通道技术器件（ICT）的设计，制造和表征，用于光电集成电路（OEIC）：双异质结光电开关（DOES），异质结场效应晶体管（HFET），双极倒置沟道场-效应晶体管（BICFET）和双极型反向沟道光电晶体管（BICPT）。
6. Enhanced Unipolar Resistive Switching Characteristics of Hf0.5Zr0.5O2 Thin Films with High ON/OFF Ratio [O] . Zhipeng Wu, Jun Zhu 2017

机译：具有高开/关比的Hf0.5Zr0.5O2薄膜的增强的单极电阻开关特性
7. Ferroelectric Polarization Switching Behavior of Hf 0.5 Zr 0.5 O 2 Gate Dielectrics on Gallium Nitride High‐Electron‐Mobility‐Transistor Heterostructures [O] . Chunlei Wu, Hansheng Ye, Benjamin Grisafe, 2019

机译：HF 0.5 ZR 0.5 O 2栅极电介质在氮化镓高电子迁移率 - 晶体管异质结构上的铁电偏振切换性能

Blocking of Conducting Channels Widens Window for Ferroelectric Resistive Switching in Interface‐Engineered Hf 0.5 Zr 0.5 O 2 Tunnel Devices

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