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Atomically flat and uniform relaxed III–V epitaxial films on silicon substrate for heterogeneous and hybrid integration

机译：在硅衬底上原子平整且均匀的松弛III-V外延薄膜，用于异构和杂交集成

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Martin Holland; Mark van Dal; Blandine Duriez; Richard Oxland; Georgios Vellianitis; Gerben Doornbos; Aryan Afzalian; Ta-Kun Chen; Chih-Hua Hsieh; Peter Ramvall; Tim Vasen; Yee-Chia Yeo; Matthias Passlack;
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1. Observation of dislocations in strain-relaxed silicon-germanium thin films with flat surfaces grown on ion-implanted silicon substrates [J] . Yamanaka J, Sawano K, Nakagawa K, Materials science in semiconductor processing . 2004,第4a6期

机译：在离子注入的硅衬底上生长平坦表面的应变松弛的硅锗薄膜中的位错的观察
2. Seed‐Layer‐Free Atomic Layer Deposition of Highly Uniform Al ₂2 O ₃3 Thin Films onto Monolayer Epitaxial Graphene on Silicon Carbide [J] . Schilirò Emanuela, Lo Nigro Raffaella, Roccaforte Fabrizio, Advanced materials interfaces . 2019,第10期

机译：高度均匀的种子 - 无均匀原子层沉积 _{2 2 O. _{3 3 薄膜在碳化硅上的单层外延石墨烯上}}
3. Achieving atomically flat surfaces for LiGaO_2 substrates for epitaxial growth of GaN films [J] . Guoqiang Li, Shichun Mu, Shao-Ju Shih Materials Science and Engineering . 2010,第1a3期

机译：为LiGaO_2衬底实现原子平坦表面，以进行GaN膜的外延生长
4. Heterogeneous Integration of III-V Devices and Si CMOS on a Silicon Substrate [C] . T. E. Kazior, J. LaRoche, W. Hoke SiGe, Ge, and Related Compounds: Materials, Processing, and Devices Symposium . 2012

机译：III-V器件和Si CMOS在硅衬底上的异质集成
5. Heterogeneous Integration of III-V Multijunction Solar Cells on Si Substrate: Cell Design & Modeling, Epitaxial Growth & Fabrication. [D] . Jain, Nikhil. 2015

机译：Si衬底上III-V多结太阳能电池的异质集成：电池设计与建模，外延生长与制造。
6. Ultrafast Growth of Uniform Multi-Layer Graphene Films Directly on Silicon Dioxide Substrates [O] . Lijie Zhou, Shuai Wei, Chuanyang Ge, 2019

机译：直接在二氧化硅衬底上直接快速生长均匀的多层石墨烯薄膜
7. Seed‐Layer‐Free Atomic Layer Deposition of Highly Uniform Al 2 O 3 Thin Films onto Monolayer Epitaxial Graphene on Silicon Carbide [O] . Emanuela Schilirò, Raffaella Lo Nigro, Fabrizio Roccaforte, 2019

机译：将高度均匀的Al 2 O 3薄膜的种子层的原子层沉积在碳化硅上的单层外延石墨烯上
8. Development of a Photoelectrochemical Etch Process to Enable Heterogeneous Substrate Integration of Epitaxial III-Nitride Semiconductors. [R] . Parameshwaran, V., Chung, R. B., Kelley, S., 2017

机译：开发光电化学蚀刻工艺以实现外延III-氮化物半导体的异质衬底整合。

Atomically flat and uniform relaxed III–V epitaxial films on silicon substrate for heterogeneous and hybrid integration

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