Combined High Power and High Frequency Operation of InGaAsP/InP Lasers at 1.3μm

摘要

A simultaneous operation of a semiconductor laser at high power and high speed was demonstrated in a buried crescent laser on a P-InP substrate. In a cavity length of 300μm, audmaximum CW power of 130mW at room temperature was obtained in a junction-up mounting configuration. A 3dB bandwidth in excess of 12GHz at an output power of 52mW was observed.