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Internal Quantum Efficiency Enhancement by Relieving Compressive Stress of GaN-Based LED

机译：通过缓解GaN的LED抗压应力来提高内部量子效率

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Yi Chin Lin; Wei Chih Liu; Chia Lun Chang; Chao Chi Chung; Yan Hao Chen; Te Yuan Chung; Cheng Yi Liu;
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1. Internal Quantum Efficiency Enhancement by Relieving Compressive Stress of GaN-Based LED [J] . Lin Y.C., Liu W.C., Chang C.L., Photonics Technology Letters, IEEE . 2014,第18期

机译：通过消除基于GaN的LED的压缩应力来提高内部量子效率
2. Effect of hole blocking layer on V-pit hole injection and internal quantum efficiency in GaN-based yellow LED [J] . Feng Deng, Zhi-Jue Quan, Yi Xu, Journal of Applied Physics . 2020,第18期

机译：孔阻断层对GaN基黄光LED V型坑洞注射和内量子效应的影响
3. Evaluation of the temperature-dependent internal quantum efficiency and the light-extraction efficiency in a GaN-based blue light-emitting diode by using a rate equation model [J] . Choi Young-Hwan, Ryu Guen-Hwan, Ryu Han-Youl Journal of the Korean Physical Society . 2016,第8期

机译：使用速率方程模型评估GaN基蓝色发光二极管中与温度相关的内部量子效率和光提取效率
4. Defects in GaN-based LEDs: impact on internal quantum efficiency and on reliability [C] . M. Meneghini, C. De Santi, M. La Grassa, Conference on light-emitting diodes: Materials, devices, and applications for solid state lighting XVIII . 2015

机译：GaN基LED的缺陷：对内部量子效率和可靠性的影响
5. Device engineering for internal quantum efficiency enhancement and efficiency droop issue in III-nitride light-emitting diodes [D] . Liu, Guangyu. 2013

机译：III型氮化物发光二极管内部量子效率提高和效率下降问题的设备工程
6. Quantum Efficiency Enhancement of a GaN-Based Green Light-Emitting Diode by a Graded Indium Composition p-Type InGaN Layer [O] . Quanbin Zhou, Hong Wang, Mingsheng Xu, 2018

机译：梯度铟成分p型InGaN层增强GaN基绿色发光二极管的量子效率
7. Influence of dislocation density on internal quantum efficiency of GaN-based semiconductors [O] . Jiadong Yu, Zhibiao Hao, Linsen Li, 2017

机译：位错密度对GaN基半导体内量子效率的影响

Internal Quantum Efficiency Enhancement by Relieving Compressive Stress of GaN-Based LED

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