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SEU characterization of commercial and custom-designed SRAMs based on 90 nm technology and below

机译：SEU基于90nm技术及以下商业和定制设计的SRAM表征

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Andrea Coronetti; Matteo Cecchetto; Jialei Wang; Maris Tali; Pablo Fernandez Martinez; Maria Kastriotou; Athina Papadopoulou; Kacper Bilko; Florent Castellani; Mario Sacristan; Ruben Garcia Alia; Carlo Cazzaniga; Yolanda Morilla; Pedro Martin-Holgado; Marc-Jan van Goethem; Harry Kiewiet; Emil van der Graaf; Sytze Brandenburg; Wojtek Hajdas; Laura Sinkunaite; Miroslaw Marszalek; Heikki Kettunen; Mikko Rossi; Jukka Jaatinen; Arto Javanainen; Marie-Helene Moscatello; Anthony Dubois; Salvatore Fiore; Giulia Bazzano; Christopher Frost; Manon Letiche; Wilfrid Farabolini; Antonio Gilardi; Roberto Corsini; Helmut Puchner;
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专利

1. SEU resistance in advanced SOI-SRAMs fabricated by commercial technology using a rad-hard circuit design [J] . Hirose K., Saito H., Kuroda Y., IEEE Transactions on Nuclear Science . 2002,第6期

机译：通过采用抗辐射电路设计的商业技术制造的高级SOI-SRAM中的SEU电阻
2. SEU Prediction From SET Modeling Using Multi-Node Collection in Bulk Transistors and SRAMs Down to the 65 nm Technology Node [J] . Artola L., Hubert G., Warren K. M., Nuclear Science, IEEE Transactions on . 2011,第3期

机译：通过使用体晶体管和SRAM中的多节点集合进行SET建模直至65 nm技术节点的SEU预测
3. Effectiveness of TMR-Based Techniques to Mitigate Alpha-Induced SEU Accumulation in Commercial SRAM-Based FPGAs [J] . Manuzzato A., Gerardin S., Paccagnella A., IEEE Transactions on Nuclear Science . 2008,第4期

机译：基于TMR的技术可缓解基于商用SRAM的FPGA中Alpha引起的SEU累积
4. SEU characterization of commercial and custom-designed SRAMs based on 90 nm technology and below [C] . Andrea Coronetti, Matteo Cecchetto, Jialei Wang, IEEE Radiation Effects Data Workshop;IEEE Nuclear and Space Radiation Effects Conference . 2020

机译：SEU基于90nm技术及以下商业和定制设计的SRAM表征
5. Study of the effects of crosstalk between the feedback resistors on a SRAM cell's SEU immunity. [D] . Thota, Mamatha. 1997

机译：研究反馈电阻之间的串扰对SRAM单元的SEU抗扰性的影响。
6. Surface and Electrical Characterization of Ag/AgCl Pseudo-Reference Electrodes Manufactured with Commercially Available PCB Technologies [O] . Despina Moschou, Tatiana Trantidou, Anna Regoutz, 2015

机译：使用市售PCB技术制造的Ag / AgCl伪参考电极的表面和电特性
7. Analysis of Resistive-Bridging Defects in SRAM Core-Cells: a Comparative Study from 90nm down to 40nm Technology Nodes* [O] . R. Alves, Fonseca L. Dilillo, A. Bosio, 2014

机译：sRam核心单元中电阻 - 桥接缺陷的分析：从90nm到40nm技术节点的比较研究*

SEU characterization of commercial and custom-designed SRAMs based on 90 nm technology and below

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