首页> 外文OA文献 >Avoiding noise frequency interference with binary phase pulse driving and CDS for capacitive TSP controller

【2h】

Avoiding noise frequency interference with binary phase pulse driving and CDS for capacitive TSP controller

机译：避免对电容TSP控制器的二进制相位脉冲驱动和CD的噪声频率干扰

代理获取

本网站仅为用户提供外文OA文献查询和代理获取服务，本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文，但由于OA文献来源多样且变更频繁，仍可能出现获取不到、文献不完整或与标题不符等情况，如果获取不到我们将提供退款服务。请知悉。

页面导航

著录项
引文网络
相似文献
相关主题

著录项

作者
Yong-Sung Ahn; Taek-Joon Ahn; Kyongsu Lee; Jin-Ku Kang;
展开▼
作者单位

展开▼
年度 2014
总页数
原文格式 PDF
正文语种
中图分类

相似文献

外文文献
中文文献
专利

1. Avoiding noise frequency interference with binary phase pulse driving and CDS for capacitive TSP controller [J] . Jin-Ku Kang, Kyongsu Lee, Taek-Joon Ahn, IEICE Electronics Express . 2014,第21期

机译：通过电容式TSP控制器的二进制相位脉冲驱动和CDS避免噪声频率干扰
2. Decision-directed PLL for coherent optical pulse CDMA systems in the presence of multiuser interference, laser phase noise, and shot noise [J] . Wei Huang, Andonovic I. Journal of Lightwave Technology . 1998,第10期

机译：存在多用户干扰，激光相位噪声和散粒噪声的情况下，用于相干光脉冲CDMA系统的决策导向PLL
3. Driving frequency fluctuations in pulsed capacitively coupled plasmas [J] . Poulose John, Goeckner Matthew, Shannon Steven, The European physical journal, D. Atomic, molecular, and optical physics . 2017,第9期

机译：脉冲电容耦合等离子体的驱动频率波动
4. A 0.4 V driving multi-touch capacitive sensor with the driving signal frequency set to (n+0.5) times the inverse of the LCD VCOM noise period [C] . Lee Jae-seung, Yeo Dong-Hee, Lee Sang-Soo, IEEE International Symposium on Circuits and Systems . 2014

机译：一个0.4 V驱动多点触摸电容式传感器，其驱动信号频率设置为LCD VCOM噪声周期的倒数的（n + 0.5）倍
5. A low phase noise fast-settling PLL frequency synthesizer for CDMA receivers. [D] . Wu, Shaojun. 2004

机译：用于CDMA接收机的低相位噪声快速建立PLL频率合成器。
6. Increased frequencies of CD8+CD57+ T cells are associated with antibody neutralization breadth against HIV in viraemic controllers [O] . Christine D Palmer, Marisol Romero-Tejeda, Eileen P Scully, 2016

机译：CD8 + CD57 + T细胞频率增加与病毒控制者中针对HIV的抗体中和广度有关
7. Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by low frequency noise and pulsed electrical measurements Influence of gate leakage current on AlGaN/GaN HEMTs evidenced by pulsed I-V and low frequency noise measurements [O] . Karboyan Serge, Tartarin Jean-Guy, Rzin M, 2013

机译：栅极漏电流对alGaN / GaN HEmT的影响由低频噪声和脉冲电测量证明，栅极漏电流对alGaN / GaN HEmT的影响由脉冲I-V和低频噪声测量证明

Avoiding noise frequency interference with binary phase pulse driving and CDS for capacitive TSP controller

著录项

引文网络

相似文献

相关主题

期刊订阅