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Morphological Expression of the Coherence and Relative Phase of Optical Inputs to the Photoelectrodeposition of Nanopatterned Se-Te Films

机译:纳米图案化Se-Te薄膜光电沉积的光输入相干和相对相位的形态表达

摘要

Highly anisotropic and ordered nanoscale lamellar morphologies can be spontaneously generated over macroscopic areas, without the use of a photomask or any templating agents, via the photoelectrodeposition of Se–Te alloy films. To form such structures, the light source can be a single, linearly polarized light source that need not necessarily be highly coherent. In this work, the variation in the morphologies produced by this deposition process was evaluated in response to differences in the coherence and relative phase between multiple simultaneous linearly polarized illumination inputs. Specifically, the morphologies of photoelectrodeposits were evaluated when two tandem same-wavelength sources with discrete linear polarizations, both either mutually incoherent or mutually coherent (with defined phase differences), were used. Additionally, morphologies were simulated via computer modeling of the interfacial light scattering and absorption during the photoelectrochemical growth process. The morphologies that were generated using two coherent, in-phase sources were equivalent to those generated using only a single source. In contrast, the use of two coherent, out-of-phase sources produced a range of morphological patterns. For small out-of-phase addition of orthogonal polarization components, lamellar-type patterns were observed. When fully out-of-phase orthogonal sources (circular polarization) were used, an isotropic, mesh-type pattern was instead generated, similar to that observed when unpolarized illumination was utilized. In intermediate cases, anisotropic lamellar-type patterns were superimposed on the isotropic mesh-type patterns, and the relative height between the two structures scaled with the amount of out-of-phase addition of the orthogonal polarization components. Similar results were obtained when two incoherent sources were utilized. In every case, the long axis of the lamellar-type morphology component aligned parallel to the intensity-weighted average polarization orientation. The observations consistently agreed with computer simulations, indicating that the observed morphologies were fully determined by the nature of the illumination utilized during the growth process. The collective data thus indicated that the photoelectrodeposition process exhibits sensitivity toward the coherency, relative phase, and polarization orientations of all optical inputs and that this sensitivity is physically expressed in the morphology of the deposit.
机译:通过Se-Te合金薄膜的光电沉积,可以在宏观区域上自发生成高度各向异性和有序的纳米层状形态,而无需使用光掩模或任何模板剂。为了形成这样的结构,光源可以是不一定是高度相干的单个线性偏振光源。在这项工作中,响应于多个同时线性偏振照明输入之间相干性和相对相位的差异,评估了由该沉积过程产生的形貌变化。具体来说,当使用两个具有离散线性偏振的串联相同波长的光源时,评估了光电沉积的形貌。另外,通过在光电化学生长过程中界面光的散射和吸收的计算机建模来模拟形态。使用两个相干,同相源生成的形态与仅使用单个源生成的形态等效。相反,使用两个相干的相异相位源会产生一系列形态学图案。对于少量的正交偏振分量的异相添加,观察到层状图案。当使用完全异相的正交光源(圆偏振)时,将生成一个各向同性的网状图案,类似于使用非偏振照明时观察到的图案。在中间情况下,各向异性的层状图案叠加在各向同性的网格状图案上,并且两个结构之间的相对高度随正交极化分量的异相添加量而缩放。当使用两个非相干源时,获得了相似的结果。在每种情况下,层状形态成分的长轴都平行于强度加权平均极化方向。观察结果与计算机模拟一致,表明观察到的形态完全取决于生长过程中所用照明的性质。因此,集体数据表明,光电沉积过程对所有光输入的相干性,相对相位和偏振取向都表现出敏感性,并且这种敏感性在沉积物的形态上物理表达。

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