Nonlinear transport properties of doped III-N and GaAs polar semiconductors: A comparison

摘要

In the previous article we have presented a study of the transport properties of doped direct-gap inverted-band polar semiconductors III-nitrides and GaAs in the steady state, calculated with a nonlinear quantum transport theory based on a nonequilibrium ensemble formalism. In the present one such results are compared with calculations using Monte Carlo-modeling simulations and with experimental measurements. Materials of the n-type and p-type dopings in the presence of intermediate to high electric fields, and for several temperatures of the external reservoir, are considered. The agreement between the results obtained using the nonlinear quantum kinetic theory, with those of Monte Carlo calculations and experimental data is remarkably good, thus satisfactorily validating this powerful, concise, and physically sound formalism. (c) 2005 American Institute of Physics.