The authors demonstrate the fabrication of suspended nanowires and doubly clamped beams by using a focused ion beam implanted Ga etch maskud followed by an inductively coupled plasma reactive ion etching ofud silicon. This method will demonstrate how a two-step, completely dryud fabrication sequence can be tuned to generate nanomechanical structuresud on either silicon substrates or silicon on insulator (SOI). This methodud was used to generate lateral nanowires suspended between 2 µm scaledud structures with lengths up to 16 µm and widths down to 40 nm on aud silicon substrate. The authors also fabricate 10 µm long doublyud clamped beams on SOIs that are 20 nm thick and a minimum of 150 nmud wide. In situ electrical measurements of the beams demonstrate aud reduction of resistivity from > 37.5 Ω cm down to 0.25 Ω cm.ud Transmission electron microscopy for quantifying both surface roughnessud and crystallinity of the suspended nanowires was performed. Finally, aud dose array for repeatable fabrication of a desired beam width was alsoud experimentally determined.
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