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Reflection high-energy electron diffraction experimental analysis of polycrystalline MgO films with grain size and orientation distributions

机译:晶粒尺寸和取向分布的MgO多晶薄膜的反射高能电子衍射实验分析

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摘要

Analysis of biaxial texture of MgO films grown by ion-beam-assisted deposition (IBAD) has been performed using a quantitative reflection high-energy electron diffraction (RHEED) based method. MgO biaxial texture is determined by analysis of diffraction spot shapes from single RHEED images, and by measuring the width of RHEED in-plane rocking curves for MgO films grown on amorphous Si3N4 by IBAD using 750 eV Ar+ ions, at 45° incidence angle, and MgO e-beam evaporation. RHEED-based biaxial texture measurement accuracy is verified by comparison with in-plane and out-of-plane orientation distribution measurements made using transmission electron microscopy and x-ray rocking curves. In situ RHEED measurements also enable the analysis of the evolution of the biaxial texture which narrows with increasing film thickness. RHEED-based measurements of IBAD MgO biaxial texture show that the minimum in-plane orientation distribution depends on the out-of-plane orientation distribution, and indicates that the minimum obtainable in-plane orientation on distribution is 2°.
机译:已经使用基于定量反射高能电子衍射(RHEED)的方法对通过离子束辅助沉积(IBAD)生长的MgO膜的双轴织构进行了分析。 MgO双轴织构是通过分析来自单个RHEED图像的衍射光斑形状并通过测量IBAD使用750 eV Ar +离子在45°入射角下在非晶Si3N4上生长的MgO膜的RHEED面内摇摆曲线的宽度来确定的MgO电子束蒸发。通过与使用透射电子显微镜和X射线摇摆曲线进行的面内和面外取向分布测量结果进行比较,验证了基于RHEED的双轴纹理测量精度。原位RHEED测量还可以分析随薄膜厚度增加而变窄的双轴织构的演变。 IBAD MgO双轴织构的基于RHEED的测量表明,最小面内取向分布取决于面外取向分布,并且指示在分布上可获得的最小面内取向为2°。

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