首页> 外文OA文献 >Amorphous Ta–Si–N thin‐film alloys as diffusion barrier in Al/Si metallizations
【2h】

Amorphous Ta–Si–N thin‐film alloys as diffusion barrier in Al/Si metallizations

机译:Ta-Si-N非晶态薄膜合金作为Al / Si金属镀层的扩散阻挡层

代理获取
本网站仅为用户提供外文OA文献查询和代理获取服务,本网站没有原文。下单后我们将采用程序或人工为您竭诚获取高质量的原文,但由于OA文献来源多样且变更频繁,仍可能出现获取不到、文献不完整或与标题不符等情况,如果获取不到我们将提供退款服务。请知悉。

摘要

Amorphous Ta–Si–N thin films of a wide range of compositions were prepared by rf reactive sputtering of a Ta_5Si_3 target in a N_2/Ar plasma. The relationship between films’ composition and resistivity is reported. All obtained films were tested as diffusion barriers between Al and Si. Backscattering spectrometry combined with cross‐sectional transmission electron microscopy were used to determine the barrier effectiveness. It was found that aluminum can be melted on top of the Si/Ta–Si–N structure (675 °C for 30 min) without any evidence of metallurgical interactions between the layers.
机译:通过在N_2 / Ar等离子体中对Ta_5Si_3靶进行射频反应溅射,制备了具有多种成分的非晶Ta-Si-N薄膜。报道了膜的组成和电阻率之间的关系。测试所有获得的膜作为Al和Si之间的扩散阻挡层。背散射光谱结合横截面透射电子显微镜用于确定屏障的有效性。发现铝可以在Si / Ta-Si-N结构(675°C持续30分钟)的顶部熔化,而没有任何层间冶金相互作用的迹象。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
代理获取

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号