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Dynamical x-ray diffraction from nonuniform crystalline films: Application to x-ray rocking curve analysis

机译:非均匀晶体膜的动态X射线衍射:在X射线摇摆曲线分析中的应用

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摘要

A dynamical model for the general case of Bragg x-ray diffraction from arbitrarily thick nonuniform crystalline films is presented. The model incorporates depth-dependent strain and a spherically symmetric Gaussian distribution of randomly displaced atoms and can be applied to the rocking curve analysis of ion-damaged single crystals and strained layer superlattices. The analysis of x-ray rocking curves using this model provides detailed strain and damage depth distributions for ion-implanted or MeV-ion-bombarded crystals and layer thickness, and lattice strain distributions for epitaxial layers and superlattices. The computation time using the dynamical model is comparable to that using a kinematical model. We also present detailed strain and damage depth distributions in MeV-ion-bombarded GaAs(100) crystals. The perpendicular strain at the sample surface, measured as a function of ion-beam dose (D), nuclear stopping power (Sn), and electronic stopping power (Se) is shown to vary according to (1–kSe)DSn and saturate at high doses.
机译:提出了从任意厚度的不均匀晶体膜进行布拉格X射线衍射的一般情况的动力学模型。该模型结合了深度依赖的应变和随机位移原子的球对称高斯分布,可用于离子损伤的单晶和应变层超晶格的摇摆曲线分析。使用该模型对X射线摇摆曲线进行分析,可以提供离子注入或MeV离子注入的晶体的详细应变和损伤深度分布以及层厚度,以及外延层和超晶格的晶格应变分布。使用动力学模型的计算时间与使用运动学模型的计算时间相当。我们还介绍了MeV离子轰击GaAs(100)晶体的详细应变和损伤深度分布。样品表面的垂直应变,根据离子束剂量(D),核阻止能力(Sn)和电子阻止能力(Se)的函数显示,根据(1-kSe)DSn变化,并在高剂量。

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