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MR head response from arrays of lithographically patterned perpendicular nickel columns

机译:光刻图案化的垂直镍柱阵列的MR磁头响应

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摘要

We report, for the first time, the MR head response from lithographically patterned perpendicular nickel columns. Electron-beam lithography is used to fabricate arrays of Ni columns, 400 nm tall and 150 nm in diameter spaced 2.1 μm apart, embedded in SiO2. The sample surface is planarized with a chemical mechanical polish. The technique of Scanning Magnetoresistance Microscopy (SMRM), in which a magnetoresistive (MR) head is raster-scanned in contact with a sample, is used to investigate the MR head response from the Ni columns. Single columns can be “read” with a 0-peak MR voltage of 60-70 μV. Unexpectedly, we find that the magnetic field due to the bias current in the MR head is enough to switch the columns during scanning, which results in a “dibit-like” MR response, By scanning in the presence of a small (~21 Oe) external magnetic bias field, the columns can be imaged in either their “up” or “down” magnetic states.
机译:我们首次报告了平版印刷的垂直镍柱的MR磁头响应。电子束光刻用于制造嵌入在SiO2中的Ni柱阵列,该Ni柱阵列的高度为400 nm,直径为150 nm,间距为2.1μm。样品表面用化学机械抛光剂平坦化。扫描磁阻显微镜(SMRM)技术用于研究与样品接触的磁阻(MR)头的光栅扫描,该技术用于研究Ni柱的MR头响应。可以使用60-70μV的0峰MR电压“读取”单列。出乎意料的是,我们发现,由于在MR小头(〜21 Oe)的情况下进行扫描,因此MR头中的偏置电流所产生的磁场足以在扫描过程中切换列,从而导致“类比特”的MR响应。 )外部磁偏置场,这些列可以在其“向上”或“向下”磁性状态下成像。

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