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ZrOX insertion layer enhanced switching and synaptic performances of TiOX-based memristive devices

机译：Zroox插入层增强了基于TiOx的忆内装置的切换和突触性能

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Lung-Yu Chang; Firman Mangasa Simanjuntak; Femiana Gapsari; Themis Prodromakis; Tseung-Yuen Tseng;
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年度 2021
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1. Controllable analog resistive switching and synaptic characteristics in ZrO_2/ ZTO bilayer memristive device for neuromorphic systems [J] . Ismail Muhammad, Abbas Haider, Choi Changhwan, Applied Surface Science . 2020,第Nova1期

机译：ZrO_2 / ZTO双层椎间膜膜装置中可控模拟电阻切换和突触特性进行神经形式系统
2. Exploration of highly enhanced performance and resistive switching mechanism in hafnium doping ZnO memristive device [J] . Zhang Li, Huang Hong, Ye Cong, Semiconductor science and technology . 2018,第8期

机译：ha掺杂ZnO忆阻器件的高性能和电阻转换机制的探索。
3. Enhancing the performance of poly(3-methylthiophene)-based electrochromic devices via insertion of a TiO_2 buffer layer [J] . Chien-Hsin Yang, Yu-Chun Lo, Po-Ling Huang, Journal of Electroanalytical Chemistry: An International Journal Devoted to All Aspects of Electrode Kinetics, Interfacial Structure, Properties of Electrolytes, Colloid and Biological Electrochemistry . 2011,第1期

机译：通过插入TiO_2缓冲层提高基于聚（3-甲基噻吩）的电致变色器件的性能
4. Impact of p-GaN layer Doping on Switching Performance of Enhancement Mode GaN Devices [C] . Dhawal Mahajan, Sourabh Khandelwal IEEE Workshop on control and modeling for power electronics . 2018

机译：p-GaN层掺杂对增强型GaN器件开关性能的影响
5. Interfacial studies in bulk-heterojunction organic photovoltaic devices: Performance effects and enhancement mechanisms of p-nickel oxide anode interlayers and hydrochloric acid-treated tin-doped indium oxide anodes. [D] . Irwin, Michael David. 2009

机译：体-异质结有机光伏器件的界面研究：对-氧化镍阳极中间层和盐酸处理的掺锡氧化铟阳极的性能影响和增强机理。
6. Utilizing the Switching Stochasticity of HfO2/TiOx-Based ReRAM Devices and the Concept of Multiple Device Synapses for the Classification of Overlapping and Noisy Patterns [O] . Christopher Bengel, Felix Cüppers, Melika Payvand, 2021

机译：利用基于HFO2 / TiOx的RERAM设备的切换性旋转性和多个设备突触的概念用于重叠和嘈杂模式的分类
7. Single- and bi-layer memristive devices with tunable properties using TiOx switching layers deposited by reactive sputtering [O] . Jiang, Hao, Xia, Qiangfei 2014

机译：具有可调谐特性的单层和双层忆阻器件，使用通过反应溅射沉积的TiOx开关层

ZrOX insertion layer enhanced switching and synaptic performances of TiOX-based memristive devices

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